Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions
The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant...
Збережено в:
| Дата: | 2005 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120644 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions / V.M. Hodovaniouk, I.V. Doktorovych, V.K. Butenko, V.H. Yuryev, Yu.G. Dobrovolsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 83-86. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the input resistance and capacitance are considered, the influence of the PD radiant-flux characteristic under background radiation and the preamplifier output signal dependence on the background current and intrinsic resistance are investigated. It is shown that the change of the PD parameters under background radiation is similar to the influence of the PD equivalents – equivalents of capacitance and resistance. |
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