Active region of CdTe X-/γ-ray detector with Schottky diode
It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics becom...
Збережено в:
| Дата: | 2005 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120653 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Active region of CdTe X-/γ-ray detector with Schottky diode / L.A. Kosyachenko, O.L. Maslyanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 45-50. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the Schottky diode. Under high reverse bias, however, the diode characteristics become standard. To achieve semi-insulating conductivity in CdTe, it is impossible to widen considerably the depleted layer in the diode. Therefore, the region of the high electric field is only a small part of the substrate thickness. Too small capacitance value and its weak dependence on the bias voltage observed in the Schottky diode made of semi-insulating CdTe are a result of the effect of the substrate resistance and the wide space charge region in the diode. |
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