Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si
The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modificatio...
Збережено в:
| Дата: | 2015 |
|---|---|
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120722 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120722 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1207222017-06-13T03:06:11Z Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si Red’ko, S.M. The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modifications related with the magnetic field induced destruction of metastable complexes has been discussed. 2015 Article Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.01.071 PACS 78.55.Cr, 71.55.Eq http://dspace.nbuv.gov.ua/handle/123456789/120722 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The long-term transformations of photoluminescence of GaN:Si treated with pulsed weak magnetic fields have been studied. The defect structure transformations have been inferred from the radiative recombination spectra within the range 350…650 nm at 300 K. A possible mechanism of observed modifications related with the magnetic field induced destruction of metastable complexes has been discussed. |
| format |
Article |
| author |
Red’ko, S.M. |
| spellingShingle |
Red’ko, S.M. Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Red’ko, S.M. |
| author_sort |
Red’ko, S.M. |
| title |
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
| title_short |
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
| title_full |
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
| title_fullStr |
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
| title_full_unstemmed |
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si |
| title_sort |
influence of treatment in weak magnetic fields on photoluminescence of gan:si |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120722 |
| citation_txt |
Influence of treatment in weak magnetic fields on photoluminescence of GaN:Si / S.M. Red’ko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 71-73. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT redkosm influenceoftreatmentinweakmagneticfieldsonphotoluminescenceofgansi |
| first_indexed |
2023-10-18T20:37:44Z |
| last_indexed |
2023-10-18T20:37:44Z |
| _version_ |
1796150694997131264 |