About self-activated orange emission in ZnO
Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obta...
Збережено в:
| Дата: | 2015 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120723 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | About self-activated orange emission in ZnO / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 134-137. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Nominally undoped ZnO ceramics were sintered in air and N₂ flow at 1000 °C. Room temperature photoluminescence (PL) spectra of the samples were measured and analyzed using Gaussian fitting. The self-activated orange PL band peaking at 610 nm was separated by Gaussian deconvolution. Based on the obtained results compared with some literature data, it has been concluded that the defects responsible for self-activated orange emission in ZnO are zinc vacancies. |
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