Nonlinear-optical processes at streamer discharge in semiconductors
The possibility of light auto-channelling (self-trapping) in conditions of streamer discharge in hexagonal and cubic semiconductors was shown. It is considered the mechanism of discharge in the wide-gap compounds on the basis of representation about the light auto-channelling at streamer excitation,...
Збережено в:
| Дата: | 2015 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120724 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Nonlinear-optical processes at streamer discharge in semiconductors / K.I. Rusakov, V.V. Parashchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 36-39. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The possibility of light auto-channelling (self-trapping) in conditions of streamer discharge in hexagonal and cubic semiconductors was shown. It is considered the mechanism of discharge in the wide-gap compounds on the basis of representation about the light auto-channelling at streamer excitation, providing their high propagation velocity down to ~5∙10⁹ cm/s, the crystallographic orientation (directionality), filamentary character at thickness of the channel about 1 μm and absence of the catastrophic destructions of a crystal. |
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