Dependence of the collision integral on electric field

Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier conductivity.

Збережено в:
Бібліографічні деталі
Дата:2015
Автор: Boiko, I.I.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120725
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Dependence of the collision integral on electric field / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 138-143. — Бібліогр.: 7 назв. — англ.

Репозитарії

Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1207252017-06-13T03:03:09Z Dependence of the collision integral on electric field Boiko, I.I. Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier conductivity. 2015 Article Dependence of the collision integral on electric field / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 138-143. — Бібліогр.: 7 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.02.138 PACS 72.10-d, 72.20-i http://dspace.nbuv.gov.ua/handle/123456789/120725 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier conductivity.
format Article
author Boiko, I.I.
spellingShingle Boiko, I.I.
Dependence of the collision integral on electric field
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Boiko, I.I.
author_sort Boiko, I.I.
title Dependence of the collision integral on electric field
title_short Dependence of the collision integral on electric field
title_full Dependence of the collision integral on electric field
title_fullStr Dependence of the collision integral on electric field
title_full_unstemmed Dependence of the collision integral on electric field
title_sort dependence of the collision integral on electric field
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/120725
citation_txt Dependence of the collision integral on electric field / I.I. Boiko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 138-143. — Бібліогр.: 7 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT boikoii dependenceofthecollisionintegralonelectricfield
first_indexed 2023-10-18T20:37:57Z
last_indexed 2023-10-18T20:37:57Z
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