Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100)
In this paper, the study of the recombination of non-equilibrium charge carriers and determination of recombination mechanisms in Ge/Si heterostructures with nanoislands have been presented. The effects of long-term photoconductivity decay in Ge/Si heterostructures with Ge nanoislands have been foun...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 2015 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120734 |
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| Цитувати: | Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) / S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 97-100. — Бібліогр.: 15 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1207342017-06-13T03:02:49Z Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) Kondratenko, S.V. In this paper, the study of the recombination of non-equilibrium charge carriers and determination of recombination mechanisms in Ge/Si heterostructures with nanoislands have been presented. The effects of long-term photoconductivity decay in Ge/Si heterostructures with Ge nanoislands have been found as caused by variations of the electrostatic potential in the near-surface region of Si(100) substrate and spatial separation of electron-hole pairs between localized states of Ge nanoislands and states of wetting layer and Si. It has been shown that the photoconductivity decay depends on the excitation energy and temperature, while Ge nanoislands are Shockley-Read recombination centers with a higher recombination rate as compared with Si. 2015 Article Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) / S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 97-100. — Бібліогр.: 15 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.01.097 PACS 62.23.Eg, 72.20.Jv, 73.40.-c http://dspace.nbuv.gov.ua/handle/123456789/120734 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this paper, the study of the recombination of non-equilibrium charge carriers and determination of recombination mechanisms in Ge/Si heterostructures with nanoislands have been presented. The effects of long-term photoconductivity decay in Ge/Si heterostructures with Ge nanoislands have been found as caused by variations of the electrostatic potential in the near-surface region of Si(100) substrate and spatial separation of electron-hole pairs between localized states of Ge nanoislands and states of wetting layer and Si. It has been shown that the photoconductivity decay depends on the excitation energy and temperature, while Ge nanoislands are Shockley-Read recombination centers with a higher recombination rate as compared with Si. |
| format |
Article |
| author |
Kondratenko, S.V. |
| spellingShingle |
Kondratenko, S.V. Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Kondratenko, S.V. |
| author_sort |
Kondratenko, S.V. |
| title |
Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) |
| title_short |
Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) |
| title_full |
Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) |
| title_fullStr |
Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) |
| title_full_unstemmed |
Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) |
| title_sort |
recombination of charge carriers in heterostructures with ge nanoislands grown on si(100) |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120734 |
| citation_txt |
Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100) / S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 97-100. — Бібліогр.: 15 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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AT kondratenkosv recombinationofchargecarriersinheterostructureswithgenanoislandsgrownonsi100 |
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2023-10-18T20:37:58Z |
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2023-10-18T20:37:58Z |
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1796150702427340800 |