Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers
Effects of the presence of isolated disordered layers on the exciton scattering by compositional fluctuations in double semiconductor quantum wells have been studied. In the structures containing both ordered and disordered layers, the probability of the scattering depends on the degree of the excit...
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| Дата: | 2015 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120738 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers / G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 110-114. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-120738 |
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dspace |
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irk-123456789-1207382017-06-13T03:06:27Z Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers Vertsimakha, G.V. Effects of the presence of isolated disordered layers on the exciton scattering by compositional fluctuations in double semiconductor quantum wells have been studied. In the structures containing both ordered and disordered layers, the probability of the scattering depends on the degree of the exciton wavefunction localization in the disordered layers, where it interacts with the fluctuations. For some parameters of the structure the exciton wavefunction can penetrate deeply into the ordered layers of the structure, which leads to a sharp drop of the probability of the scattering and, consequently, to the narrowing of the optical exciton bands. It has been shown that for heterostructures containing diluted magnetic semiconductor layers, the probability of the scattering can be tuned by external magnetic field. 2015 Article Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers / G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 110-114. — Бібліогр.: 13 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.01.110 PACS 71.22.+i, 71.23.-k, 71.35.Cc, 73.21.Fg, 75.50.Pp http://dspace.nbuv.gov.ua/handle/123456789/120738 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Effects of the presence of isolated disordered layers on the exciton scattering by compositional fluctuations in double semiconductor quantum wells have been studied. In the structures containing both ordered and disordered layers, the probability of the scattering depends on the degree of the exciton wavefunction localization in the disordered layers, where it interacts with the fluctuations. For some parameters of the structure the exciton wavefunction can penetrate deeply into the ordered layers of the structure, which leads to a sharp drop of the probability of the scattering and, consequently, to the narrowing of the optical exciton bands. It has been shown that for heterostructures containing diluted magnetic semiconductor layers, the probability of the scattering can be tuned by external magnetic field. |
| format |
Article |
| author |
Vertsimakha, G.V. |
| spellingShingle |
Vertsimakha, G.V. Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vertsimakha, G.V. |
| author_sort |
Vertsimakha, G.V. |
| title |
Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers |
| title_short |
Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers |
| title_full |
Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers |
| title_fullStr |
Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers |
| title_full_unstemmed |
Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers |
| title_sort |
peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/120738 |
| citation_txt |
Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers / G.V. Vertsimakha // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 110-114. — Бібліогр.: 13 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT vertsimakhagv peculiaritiesoftheexcitonscatteringindoublesemiconductorquantumwellswithdisorderedlayers |
| first_indexed |
2023-10-18T20:37:59Z |
| last_indexed |
2023-10-18T20:37:59Z |
| _version_ |
1796150702744010752 |