Unbinding of surface defects under the defect-selective adsorption
Unbinding of surface topological defects in the presence of the defectselective adsorption is investigated using a coupled Coulomb Gas – Lattice Gas model. The unbinding temperature increases with the increasing selectivity (and coverage) for both, sign-dependent and sign-independent adsorption....
Збережено в:
| Дата: | 2003 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2003
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120742 |
| Теги: |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Unbinding of surface defects under the defect-selective adsorption / E.V. Vakarin // Condensed Matter Physics. — 2003. — Т. 6, № 3(35). — С. 541-549. — Бібліогр.: 22 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Unbinding of surface topological defects in the presence of the defectselective
adsorption is investigated using a coupled Coulomb Gas – Lattice
Gas model. The unbinding temperature increases with the increasing
selectivity (and coverage) for both, sign-dependent and sign-independent
adsorption. In the latter case, the adsorbates tend to increase the number
density of defects. The stability requirement implies that the adsorbate
cluster size must be coherent with the screening length of free defects |
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