Nonequilibrium plasmons and transport properties of a double-junction quantum wire

We study theoretically the current-voltage characteristics, shot noise, and full counting statistics of a quantum wire double barrier structure. We model each wire segment by a spinless Luttinger liquid. Within the sequential tunneling approach, we describe the system’s dynamics using a master eq...

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Збережено в:
Бібліографічні деталі
Дата:2006
Автори: Kim, J.U., Mahn-Soo Choi, Krive, I.V., Kinaret, J.M.
Формат: Стаття
Мова:English
Опубліковано: Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України 2006
Назва видання:Физика низких температур
Теми:
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120865
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Nonequilibrium plasmons and transport properties of a double-junction quantum wire / J.U. Kim, Mahn-Soo Choi, I.V. Krive, J.M. Kinaret // Физика низких температур. — 2006. — Т. 32, № 12. — С. 1522–1544. — Бібліогр.: 78 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:We study theoretically the current-voltage characteristics, shot noise, and full counting statistics of a quantum wire double barrier structure. We model each wire segment by a spinless Luttinger liquid. Within the sequential tunneling approach, we describe the system’s dynamics using a master equation. We show that at finite bias the nonequilibrium distribution of plasmons in the central wire segment leads to increased average current, enhanced shot noise, and full counting statistics corresponding to a super-Poissonian process. These effects are particularly pronounced in the strong interaction regime, while in the noninteracting case we recover results obtained earlier using detailed balance arguments.