Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers

Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ITO electrode with an intermediate layer of isotropic liquid (glycerin or distil...

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Дата:2005
Автори: Koval'chuk, A.V., Shevchuk, A.F., Naiko, D.A., Koval'chuk, T.N.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/120976
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers / A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 92-99. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1209762017-06-14T03:03:56Z Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers Koval'chuk, A.V. Shevchuk, A.F. Naiko, D.A. Koval'chuk, T.N. Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ITO electrode with an intermediate layer of isotropic liquid (glycerin or distilled water) was taken instead of the traditionally used deposited top metal electrode. Found are the conditions when C and R changes are caused by near-electrode (f < 10³ Hz) and bulk (f > 10⁴ Hz) processes. It was shown that the sharp reduction of C and R with growing the frequency corresponds to the transition from one condition to the other, and such process can be described with account of the “classical” Maxwell-Wagner mechanism of interlayer polarization. The relaxation time of such process was found to be equal approximately 10 ns. This time was shown to depend on the manufacturing technology of С₆₀ films. Having analyzed the obtained frequency dependences of C and R, an equivalent circuit of the sample was suggested. We estimated the thicknesses of the liquid layer (≈ 30 µm) and near-electrode layer of С₆₀ films (tens of nanometers). Comparing the frequency dependences of C and R on exposure to light of the bottom and top electrodes, it was assumed that the С₆₀ films under laser UV-irradiation is non-uniform in thickness. 2005 Article Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers / A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 92-99. — Бібліогр.: 18 назв. — англ. 1560-8034 PACS: 72.80 Rj, 73.61.Wp http://dspace.nbuv.gov.ua/handle/123456789/120976 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ITO electrode with an intermediate layer of isotropic liquid (glycerin or distilled water) was taken instead of the traditionally used deposited top metal electrode. Found are the conditions when C and R changes are caused by near-electrode (f < 10³ Hz) and bulk (f > 10⁴ Hz) processes. It was shown that the sharp reduction of C and R with growing the frequency corresponds to the transition from one condition to the other, and such process can be described with account of the “classical” Maxwell-Wagner mechanism of interlayer polarization. The relaxation time of such process was found to be equal approximately 10 ns. This time was shown to depend on the manufacturing technology of С₆₀ films. Having analyzed the obtained frequency dependences of C and R, an equivalent circuit of the sample was suggested. We estimated the thicknesses of the liquid layer (≈ 30 µm) and near-electrode layer of С₆₀ films (tens of nanometers). Comparing the frequency dependences of C and R on exposure to light of the bottom and top electrodes, it was assumed that the С₆₀ films under laser UV-irradiation is non-uniform in thickness.
format Article
author Koval'chuk, A.V.
Shevchuk, A.F.
Naiko, D.A.
Koval'chuk, T.N.
spellingShingle Koval'chuk, A.V.
Shevchuk, A.F.
Naiko, D.A.
Koval'chuk, T.N.
Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Koval'chuk, A.V.
Shevchuk, A.F.
Naiko, D.A.
Koval'chuk, T.N.
author_sort Koval'chuk, A.V.
title Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
title_short Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
title_full Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
title_fullStr Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
title_full_unstemmed Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers
title_sort photoelectric properties of modified c₆₀ films. maxwell-vagner type polarization between near-electrode and bulk layers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2005
url http://dspace.nbuv.gov.ua/handle/123456789/120976
citation_txt Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers / A.V. Koval'chuk, A.F. Shevchuk, D.A. Naiko, T.N. Koval'chuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 92-99. — Бібліогр.: 18 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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AT naikoda photoelectricpropertiesofmodifiedc60filmsmaxwellvagnertypepolarizationbetweennearelectrodeandbulklayers
AT kovalchuktn photoelectricpropertiesofmodifiedc60filmsmaxwellvagnertypepolarizationbetweennearelectrodeandbulklayers
first_indexed 2023-10-18T20:38:32Z
last_indexed 2023-10-18T20:38:32Z
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