A priori probabilistic model for the reliability of an "organised structure"

• Дата: 2005
• Автори: Sal'kov, E.A., Svechnikov, G.S.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/120977
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: A priori probabilistic model for the reliability of an "organised structure" / E.A. Sal'kov, G.S. Svechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 100-105. — Бібліогр.: 7 назв. — англ.

The basic possibility to create information model of the certain product (a semiconductor electronic device, or its element: p-n junction, quantum well, etc.) has been considered. Each product may be represented uniquely as a certain sequence of the Numbers set by technical requirements, drawings and process charts. The set Number may be realised only with a certain probability, therefore, the Number (N) in the initial engineering data is set with a maximum deviation from a mean value, i.e., the tolerance ±ΔN. During operation or storage, such processes as wear or ageing destroy the product deforming the tolerance of the set sequence of numbers, what is accompanied by inevitable increase of entropy. Hence, each product is endowed with the information negentropy, which may be calculated and may serve as initial value when solving an adequate equation of production of the thermodynamic entropy. As a particular example, the simplified model has been considered: a semiconductor plate covered on each side with insulator, which degrades during storage. The equality of a square of the tolerance and the real Number dispersion determined by the probability with which the Number realises with the set tolerance was taken as the base approximation.