Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor
Electronic band structure of the diluted magnetic semiconductor Cd₁₋x Mn x Te [100] ideal surface is calculated by the semiempirical tight- binding method in the framework of sps*-model. Surface bands, emerging above the bulk band structure, as well as their type, energy position and...
Збережено в:
| Дата: | 2000 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2000
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/120985 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Band structure of [100] surface of Cd₁₋x Mn x Te diluted magnetic semiconductor / S.V. Melnichuk, Y.M. Mikhailevsky, I.M. Rarenko, I.M. Yurijchuk // Condensed Matter Physics. — 2000. — Т. 3, № 4(24). — С. 799-806. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Electronic band structure of the diluted magnetic semiconductor
Cd₁₋x Mn x Te [100] ideal surface is calculated by the semiempirical tight-
binding method in the framework of sps*-model. Surface bands, emerging
above the bulk band structure, as well as their type, energy position and localization near the parting border with vacuum are investigated. It is shown
that Mn 3d-states as well as sp-states play appreciable role in the formation
of surface bands. The peculiarities of surface band structure are analyzed
in the dependence of solid solution composition. |
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