Filling of electronic states and crystal lattice deformation around dislocation wall
Within the band model we study the electron redistribution around the dislocation wall depending on the conduction band filling ( 0 < n < 1 ) taking into account the electron-deformation coupling. We show that as the conduction band filling n increases, the redistribution gets more localized a...
Збережено в:
| Видавець: | Інститут фізики конденсованих систем НАН України |
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| Дата: | 2000 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2000
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121045 |
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| Цитувати: | Filling of electronic states and crystal lattice deformation around dislocation wall / R.M. Peleschak // Condensed Matter Physics. — 2000. — Т. 3, № 1(21). — С. 169-174. — Бібліогр.: 7 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | Within the band model we study the electron redistribution around the dislocation wall depending on the conduction band filling ( 0 < n < 1 ) taking into account the electron-deformation coupling. We show that as the
conduction band filling n increases, the redistribution gets more localized
around the dislocation plane. It is established that an increase of the distance between the neighbouring dislocations raises the period of changes
in charge density redistribution ∆n along the dislocation wall, whereas a
change in the amplitude of the electron redistribution as a function of the
distance to the dislocation plane is smoother. |
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