Magnetic field dependence of conductivity and effective mass of carriers in a model of Mott-Hubbard material
The effect of external magnetic field h on a static conductivity of MottHubbard material which is described by the model with correlated hopping of electrons has been investigated. By means of canonical transformation, the effective Hamiltonian is obtained which takes into account strong intra-s...
Збережено в:
| Дата: | 2005 |
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| Автори: | , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики конденсованих систем НАН України
2005
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| Назва видання: | Condensed Matter Physics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121057 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Magnetic field dependence of conductivity and effective mass of carriers in a model of Mott-Hubbard material / L. Didukh, O. Kramar, Yu. Skorenkyy, Yu. Dovhopyaty // Condensed Matter Physics. — 2005. — Т. 8, № 4(44). — С. 825–834. — Бібліогр.: 39 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The effect of external magnetic field h on a static conductivity of MottHubbard
material which is described by the model with correlated hopping
of electrons has been investigated. By means of canonical transformation,
the effective Hamiltonian is obtained which takes into account strong
intra-site Coulomb repulsion and correlated hopping. Using a variant of
generalized Hartree-Fock approximation the single-electron Green function
and quasiparticle energy spectrum of the model have been calculated.
The static conductivity σ has been calculated as a function of h, electron
concentration n and temperature T . The correlated hopping is shown to
cause the electron-hole asymmetry of transport properties of narrow band
materials |
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