Specificity of high-pure monocrystalline silicon production for various registering and converting devices
In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 2000 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121082 |
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| Цитувати: | Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121082 |
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dspace |
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irk-123456789-1210822017-06-14T03:05:37Z Specificity of high-pure monocrystalline silicon production for various registering and converting devices Trubitsyn, Yu.V. Zverev, S.V. In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping. 2000 Article Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 81.05.C, D, E, G, H, 72.80.C, 73.61.C http://dspace.nbuv.gov.ua/handle/123456789/121082 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping. |
| format |
Article |
| author |
Trubitsyn, Yu.V. Zverev, S.V. |
| spellingShingle |
Trubitsyn, Yu.V. Zverev, S.V. Specificity of high-pure monocrystalline silicon production for various registering and converting devices Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Trubitsyn, Yu.V. Zverev, S.V. |
| author_sort |
Trubitsyn, Yu.V. |
| title |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_short |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_full |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_fullStr |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_full_unstemmed |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| title_sort |
specificity of high-pure monocrystalline silicon production for various registering and converting devices |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121082 |
| citation_txt |
Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:38:05Z |
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2023-10-18T20:38:05Z |
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