The effect of oxygen-containing anions on luminescent properties of CsI
It has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO₃) than in CsI(...
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| Дата: | 2000 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121092 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The effect of oxygen-containing anions on luminescent properties of CsI / L.N. Shpilinskaya, B.G. Zaslavsky, L.V. Kovaleva, S.I. Vasetsky, A.M. Kudin, A.I. Mitichkin, T.A. Charkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 178-180. — Бібліогр.: 6 назв. — англ. |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1210922017-06-14T03:05:39Z The effect of oxygen-containing anions on luminescent properties of CsI Shpilinskaya, L.N. Zaslavsky, B.G. Kovaleva, L.V. Vasetsky, S.I. Kudin, A.M. Mitichkin, A.I. Charkina, T.A. It has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO₃) than in CsI(SO₄) crystals. The nature of blue luminescence components has been considered and two types of centres have been suggested: the impurity type – CO₃²⁻-Va⁺ (395 nm) and the structural one – Va⁺-Vc⁻ (435 nm). A method of deep purification of the melt from oxygen-containing anions during the growth process has been proposed. 2000 Article The effect of oxygen-containing anions on luminescent properties of CsI / L.N. Shpilinskaya, B.G. Zaslavsky, L.V. Kovaleva, S.I. Vasetsky, A.M. Kudin, A.I. Mitichkin, T.A. Charkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 178-180. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 78.55.Fv, - m, 78.60.- b, Ya http://dspace.nbuv.gov.ua/handle/123456789/121092 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
It has been found that from the series of oxygen-containing impurities CO₃²⁻, SO₄²⁻, HCO₃–, OH–, IO₃–, NO₃–, NO₂–, CNO–, BO₂– only the bivalent ions stimulate an intensive blue luminescence in CsI crystals at UV- or gamma-excitation. The blue luminescence intensity is higher in CsI(CO₃) than in CsI(SO₄) crystals. The nature of blue luminescence components has been considered and two types of centres have been suggested: the impurity type – CO₃²⁻-Va⁺ (395 nm) and the structural one – Va⁺-Vc⁻ (435 nm). A method of deep purification of the melt from oxygen-containing anions during the growth process has been proposed. |
| format |
Article |
| author |
Shpilinskaya, L.N. Zaslavsky, B.G. Kovaleva, L.V. Vasetsky, S.I. Kudin, A.M. Mitichkin, A.I. Charkina, T.A. |
| spellingShingle |
Shpilinskaya, L.N. Zaslavsky, B.G. Kovaleva, L.V. Vasetsky, S.I. Kudin, A.M. Mitichkin, A.I. Charkina, T.A. The effect of oxygen-containing anions on luminescent properties of CsI Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Shpilinskaya, L.N. Zaslavsky, B.G. Kovaleva, L.V. Vasetsky, S.I. Kudin, A.M. Mitichkin, A.I. Charkina, T.A. |
| author_sort |
Shpilinskaya, L.N. |
| title |
The effect of oxygen-containing anions on luminescent properties of CsI |
| title_short |
The effect of oxygen-containing anions on luminescent properties of CsI |
| title_full |
The effect of oxygen-containing anions on luminescent properties of CsI |
| title_fullStr |
The effect of oxygen-containing anions on luminescent properties of CsI |
| title_full_unstemmed |
The effect of oxygen-containing anions on luminescent properties of CsI |
| title_sort |
effect of oxygen-containing anions on luminescent properties of csi |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121092 |
| citation_txt |
The effect of oxygen-containing anions on luminescent properties of CsI / L.N. Shpilinskaya, B.G. Zaslavsky, L.V. Kovaleva, S.I. Vasetsky, A.M. Kudin, A.I. Mitichkin, T.A. Charkina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 178-180. — Бібліогр.: 6 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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