Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions
Investigated are optical, luminescent and light-technical properties of the CdWO₄ and Bi₄Ge₃O₁₂ single crystals doped with mercury-like Bi³⁺ and Pb²⁺ impurities, respectively, with the aim of assertaining the possibility to match their spectral characteristics with a spectral sensitivity of semicond...
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| Дата: | 2000 |
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| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121110 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions / Yu. Zorenko, L.Limarenko, I. Konstankevych, M. Pashkovsky, Z. Moroz, I. Solsky, B. Grinev, V. Nekrasov, Yu. Borodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 207-212. — Бібліогр.: 8 назв. — англ. |
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irk-123456789-1211102020-10-17T00:48:22Z Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions Zorenko, Yu. Limarenko, L. Konstankevych, I. Pashkovsky, M. Moroz, Z. Solsky, I. Grinev, B. Nekrasov, V. Borodenko, Yu. Investigated are optical, luminescent and light-technical properties of the CdWO₄ and Bi₄Ge₃O₁₂ single crystals doped with mercury-like Bi³⁺ and Pb²⁺ impurities, respectively, with the aim of assertaining the possibility to match their spectral characteristics with a spectral sensitivity of semiconductor radiation detectors. It is established that the long-wave shift of the CdWO₄:Bi emission spectra and increase of the light yield in the sensitivity region of Si-PD up to 15-20% in comparison with this parameter for the CdWO₄, occuring at optimal level of the activator concentration 0.025–0.25 mass% Bi₂O₃ in the melt and contens of Li⁺ or Ag⁺ ions as compensators for providing the ratio of mentioned impurities not less than 1:(1.5÷3), is connected with emission of the (BiO₆⁹⁻) complexes with lmax = 560 nm and t = 0.8-4.2 µs at 300 K. The shift of the emission spectra of the Bi₄Ge₃O₁₂:Pb crystals into the red spectral region is caused by emission of the (PbO₆¹⁰⁻) complexes in the bands with lmax = 570 and 690 nm and t = 1.0 ms. In addition, the light yield of the Bi₄Ge₃O₁₂:Pb single crystals at impurity concentrations of 0.005–0.5 mass% PbO in the melt was not less than 1.0–0.8 in comparison with that of undoped analogs. 2000 Article Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions / Yu. Zorenko, L.Limarenko, I. Konstankevych, M. Pashkovsky, Z. Moroz, I. Solsky, B. Grinev, V. Nekrasov, Yu. Borodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 207-212. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 78.60.Ya, 78.70.- q http://dspace.nbuv.gov.ua/handle/123456789/121110 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Investigated are optical, luminescent and light-technical properties of the CdWO₄ and Bi₄Ge₃O₁₂ single crystals doped with mercury-like Bi³⁺ and Pb²⁺ impurities, respectively, with the aim of assertaining the possibility to match their spectral characteristics with a spectral sensitivity of semiconductor radiation detectors. It is established that the long-wave shift of the CdWO₄:Bi emission spectra and increase of the light yield in the sensitivity region of Si-PD up to 15-20% in comparison with this parameter for the CdWO₄, occuring at optimal level of the activator concentration 0.025–0.25 mass% Bi₂O₃ in the melt and contens of Li⁺ or Ag⁺ ions as compensators for providing the ratio of mentioned impurities not less than 1:(1.5÷3), is connected with emission of the (BiO₆⁹⁻) complexes with lmax = 560 nm and t = 0.8-4.2 µs at 300 K. The shift of the emission spectra of the Bi₄Ge₃O₁₂:Pb crystals into the red spectral region is caused by emission of the (PbO₆¹⁰⁻) complexes in the bands with lmax = 570 and 690 nm and t = 1.0 ms. In addition, the light yield of the Bi₄Ge₃O₁₂:Pb single crystals at impurity concentrations of 0.005–0.5 mass% PbO in the melt was not less than 1.0–0.8 in comparison with that of undoped analogs. |
| format |
Article |
| author |
Zorenko, Yu. Limarenko, L. Konstankevych, I. Pashkovsky, M. Moroz, Z. Solsky, I. Grinev, B. Nekrasov, V. Borodenko, Yu. |
| spellingShingle |
Zorenko, Yu. Limarenko, L. Konstankevych, I. Pashkovsky, M. Moroz, Z. Solsky, I. Grinev, B. Nekrasov, V. Borodenko, Yu. Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Zorenko, Yu. Limarenko, L. Konstankevych, I. Pashkovsky, M. Moroz, Z. Solsky, I. Grinev, B. Nekrasov, V. Borodenko, Yu. |
| author_sort |
Zorenko, Yu. |
| title |
Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions |
| title_short |
Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions |
| title_full |
Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions |
| title_fullStr |
Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions |
| title_full_unstemmed |
Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions |
| title_sort |
scintillation characteristics of the single crystalline cdwo₄ and bi₄ge₃o₁₂ compounds doped with mercury-like ions |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121110 |
| citation_txt |
Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions / Yu. Zorenko, L.Limarenko, I. Konstankevych, M. Pashkovsky, Z. Moroz, I. Solsky, B. Grinev, V. Nekrasov, Yu. Borodenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 207-212. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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