On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior
Some peculiarities in the rapid portion of the voltage dependences of luminance and transferred charge as well as in its aging behavior in ZnS:Mn thin film electroluminescent devices made by different deposition techniques have been revealed. The devices with nearly the same Mn concentration (~1 at....
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| Дата: | 2002 |
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| Автори: | , , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121128 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior / N.A. Vlasenko, Z.L. Denisova, Ya.F. Kononets, L.I. Veligura, M.M. Chumachkova, Yu.A. Tsyrkunov, E.L. Soininen, R.O. Tornqvist, K.M. Vasame // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 58-62. — Бібліогр.: 12 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1211282017-06-14T03:03:05Z On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior Vlasenko, N.A. Denisova, Z.L. Kononets, Ya.F. Veligura, L.I. Chumachkova, M.M. Tsyrkunov, Yu.A. Soininen, E.L. Tornqvist, R.O. Vasame, K.M. Some peculiarities in the rapid portion of the voltage dependences of luminance and transferred charge as well as in its aging behavior in ZnS:Mn thin film electroluminescent devices made by different deposition techniques have been revealed. The devices with nearly the same Mn concentration (~1 at. %) were deposited by electron-beam evaporation and two atomic-layer epitaxy processes based on chlorine (ZnCl₂, MnCl₂) or organic (diethyl Zn and Mn(thd)₃ ) precursors. It has been studied interrelation between these peculiarities and the differences observed in the photodepolarization spectra of the devices, which give data about defects in the ZnS:Mn films and the energy of corresponding local states in them. The obtained results are discussed as to physical processes responsible for the rapid portion of the above voltage dependences and for the causes of its change after short-time accelerated aging. 2002 Article On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior / N.A. Vlasenko, Z.L. Denisova, Ya.F. Kononets, L.I. Veligura, M.M. Chumachkova, Yu.A. Tsyrkunov, E.L. Soininen, R.O. Tornqvist, K.M. Vasame // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 58-62. — Бібліогр.: 12 назв. — англ. 1560-8034 PACS: 71.55.Gs, 78.60.Fi, 78.66.Hf http://dspace.nbuv.gov.ua/handle/123456789/121128 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Some peculiarities in the rapid portion of the voltage dependences of luminance and transferred charge as well as in its aging behavior in ZnS:Mn thin film electroluminescent devices made by different deposition techniques have been revealed. The devices with nearly the same Mn concentration (~1 at. %) were deposited by electron-beam evaporation and two atomic-layer epitaxy processes based on chlorine (ZnCl₂, MnCl₂) or organic (diethyl Zn and Mn(thd)₃ ) precursors. It has been studied interrelation between these peculiarities and the differences observed in the photodepolarization spectra of the devices, which give data about defects in the ZnS:Mn films and the energy of corresponding local states in them. The obtained results are discussed as to physical processes responsible for the rapid portion of the above voltage dependences and for the causes of its change after short-time accelerated aging. |
| format |
Article |
| author |
Vlasenko, N.A. Denisova, Z.L. Kononets, Ya.F. Veligura, L.I. Chumachkova, M.M. Tsyrkunov, Yu.A. Soininen, E.L. Tornqvist, R.O. Vasame, K.M. |
| spellingShingle |
Vlasenko, N.A. Denisova, Z.L. Kononets, Ya.F. Veligura, L.I. Chumachkova, M.M. Tsyrkunov, Yu.A. Soininen, E.L. Tornqvist, R.O. Vasame, K.M. On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vlasenko, N.A. Denisova, Z.L. Kononets, Ya.F. Veligura, L.I. Chumachkova, M.M. Tsyrkunov, Yu.A. Soininen, E.L. Tornqvist, R.O. Vasame, K.M. |
| author_sort |
Vlasenko, N.A. |
| title |
On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior |
| title_short |
On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior |
| title_full |
On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior |
| title_fullStr |
On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior |
| title_full_unstemmed |
On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior |
| title_sort |
on origin of rapid portion of luminance-voltage dependence of zns:mn tfel devices and its aging behavior |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121128 |
| citation_txt |
On origin of rapid portion of luminance-voltage dependence of ZnS:Mn TFEL devices and its aging behavior / N.A. Vlasenko, Z.L. Denisova, Ya.F. Kononets, L.I. Veligura, M.M. Chumachkova, Yu.A. Tsyrkunov, E.L. Soininen, R.O. Tornqvist, K.M. Vasame // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 58-62. — Бібліогр.: 12 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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