Diffusion model of defect formation in silicon under light ion implantation
In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well quantitatively. In contrast to the models existing by now, it takes into accoun...
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| Дата: | 2000 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121130 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Diffusion model of defect formation in silicon under light ion implantation / M.V. Voznyy, P.M. Gorley, V.A. Schenderovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 271-274. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121130 |
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| record_format |
dspace |
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irk-123456789-1211302017-06-14T03:03:46Z Diffusion model of defect formation in silicon under light ion implantation Voznyy, M.V. Gorley, P.M. Schenderovskyy, V.A. In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well quantitatively. In contrast to the models existing by now, it takes into account the dissociation processes of complex defects. In the frame of assumption about subsurface vacancy absorption layer existence the expressions for spatial distributions of secondary defect stationary concentrations are obtained using the Lie group theory. Non-stationary complex defect system behavior in silicon is simulated depending on vacancy trap concentration, ion current density and implanted atom energy. 2000 Article Diffusion model of defect formation in silicon under light ion implantation / M.V. Voznyy, P.M. Gorley, V.A. Schenderovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 271-274. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 61.78.T, 66.30 http://dspace.nbuv.gov.ua/handle/123456789/121130 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well quantitatively. In contrast to the models existing by now, it takes into account the dissociation processes of complex defects. In the frame of assumption about subsurface vacancy absorption layer existence the expressions for spatial distributions of secondary defect stationary concentrations are obtained using the Lie group theory. Non-stationary complex defect system behavior in silicon is simulated depending on vacancy trap concentration, ion current density and implanted atom energy. |
| format |
Article |
| author |
Voznyy, M.V. Gorley, P.M. Schenderovskyy, V.A. |
| spellingShingle |
Voznyy, M.V. Gorley, P.M. Schenderovskyy, V.A. Diffusion model of defect formation in silicon under light ion implantation Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Voznyy, M.V. Gorley, P.M. Schenderovskyy, V.A. |
| author_sort |
Voznyy, M.V. |
| title |
Diffusion model of defect formation in silicon under light ion implantation |
| title_short |
Diffusion model of defect formation in silicon under light ion implantation |
| title_full |
Diffusion model of defect formation in silicon under light ion implantation |
| title_fullStr |
Diffusion model of defect formation in silicon under light ion implantation |
| title_full_unstemmed |
Diffusion model of defect formation in silicon under light ion implantation |
| title_sort |
diffusion model of defect formation in silicon under light ion implantation |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121130 |
| citation_txt |
Diffusion model of defect formation in silicon under light ion implantation / M.V. Voznyy, P.M. Gorley, V.A. Schenderovskyy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 271-274. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT voznyymv diffusionmodelofdefectformationinsiliconunderlightionimplantation AT gorleypm diffusionmodelofdefectformationinsiliconunderlightionimplantation AT schenderovskyyva diffusionmodelofdefectformationinsiliconunderlightionimplantation |
| first_indexed |
2023-10-18T20:38:44Z |
| last_indexed |
2023-10-18T20:38:44Z |
| _version_ |
1796150740623818752 |