III-V material solar cells for space application
The present paper is a review of current situation in space solar cell engineering. The comparison of the Si and III-V solar cell performances, as well as their parameter variation with temperature rise, radiation treatments and improving design were analyzed. The modern directions of the space sola...
Збережено в:
| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2002 |
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121133 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Цитувати: | III-V material solar cells for space application / T.V. Torchynska, G.P. Polupan // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 63-70. — Бібліогр.: 58 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| Резюме: | The present paper is a review of current situation in space solar cell engineering. The comparison of the Si and III-V solar cell performances, as well as their parameter variation with temperature rise, radiation treatments and improving design were analyzed. The modern directions of the space solar cell development and international space projects, applied new types of solar cells, were discussed as well. |
|---|