Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals
Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects...
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| Дата: | 2000 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121140 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals / M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin, E.F. Dolzhenkova, M.V. Dobrotvorskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 420-422. — Бібліогр.: 16 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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| spelling |
irk-123456789-1211402017-06-14T03:06:15Z Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals Dubovik, M.F. Tolmachev, A.V. Grinyov, B.V. Grin, L.A. Dolzhenkova, E.F. Dobrotvorskaya, M.V. Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects and their participation in recombination process in LTB:Eu are considered. Suggestions about character of Eu site in the host lattice based on the photoluminescence spectral data are discussed. The electron structure of LTB crystals measured by XPS method is presented. 2000 Article Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals / M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin, E.F. Dolzhenkova, M.V. Dobrotvorskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 420-422. — Бібліогр.: 16 назв. — англ. 1560-8034 PACS: 78.40.-q; 78.55.-m; 78.70.En http://dspace.nbuv.gov.ua/handle/123456789/121140 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Thermostimulated luminescence (TSL) of Li₂B₄O₇ and Li₂B₄O₇:Eu single crystals in the temperature range 290-650K has been studied. Lithium tetraborate (LTB) doped with europium has been found to favour a further increase of the light sum storage of electron-captured centres. Radiation-induced defects and their participation in recombination process in LTB:Eu are considered. Suggestions about character of Eu site in the host lattice based on the photoluminescence spectral data are discussed. The electron structure of LTB crystals measured by XPS method is presented. |
| format |
Article |
| author |
Dubovik, M.F. Tolmachev, A.V. Grinyov, B.V. Grin, L.A. Dolzhenkova, E.F. Dobrotvorskaya, M.V. |
| spellingShingle |
Dubovik, M.F. Tolmachev, A.V. Grinyov, B.V. Grin, L.A. Dolzhenkova, E.F. Dobrotvorskaya, M.V. Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Dubovik, M.F. Tolmachev, A.V. Grinyov, B.V. Grin, L.A. Dolzhenkova, E.F. Dobrotvorskaya, M.V. |
| author_sort |
Dubovik, M.F. |
| title |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals |
| title_short |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals |
| title_full |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals |
| title_fullStr |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals |
| title_full_unstemmed |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals |
| title_sort |
luminescence and radiation-induced defects in li₂b₄o₇:eu single crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121140 |
| citation_txt |
Luminescence and radiation-induced defects in Li₂B₄O₇:Eu single crystals / M.F. Dubovik, A.V. Tolmachev, B.V. Grinyov, L.A. Grin, E.F. Dolzhenkova, M.V. Dobrotvorskaya // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 420-422. — Бібліогр.: 16 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT dubovikmf luminescenceandradiationinduceddefectsinli2b4o7eusinglecrystals AT tolmachevav luminescenceandradiationinduceddefectsinli2b4o7eusinglecrystals AT grinyovbv luminescenceandradiationinduceddefectsinli2b4o7eusinglecrystals AT grinla luminescenceandradiationinduceddefectsinli2b4o7eusinglecrystals AT dolzhenkovaef luminescenceandradiationinduceddefectsinli2b4o7eusinglecrystals AT dobrotvorskayamv luminescenceandradiationinduceddefectsinli2b4o7eusinglecrystals |
| first_indexed |
2023-10-18T20:38:46Z |
| last_indexed |
2023-10-18T20:38:46Z |
| _version_ |
1796150743694049280 |