Melt instabilities on semiconductor surfaces induced by laser radiation
Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined that spontaneous segregation of uniform temperature stage of crystal lattice and...
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| Дата: | 2000 |
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| Автори: | , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121141 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Melt instabilities on semiconductor surfaces induced by laser radiation / A.Yu. Bonchik, B.J. Dacko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 311-315. — Бібліогр.: 8 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1211412017-06-14T03:03:13Z Melt instabilities on semiconductor surfaces induced by laser radiation Bonchik, A.Yu. Dacko, B.J. Demchuk, V.I. Kiyak, S.G. Palyvoda, I.P. Shnyr, A.F. Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined that spontaneous segregation of uniform temperature stage of crystal lattice and charge carrier concentration can take place in electron-hole plasma, generated by laser radiation. Besides, there exists a positive feedback between the temperature of crystal lattice and charge carrier concentration in the region of their fluctuation. It causes both amplification of original fluctuation of temperature and generation of quasi-periodic temperature fields of large amplitude in semiconductors. The nonuniform temperature fields determine the features of surface relief formation in a zone of laser radiation action. 2000 Article Melt instabilities on semiconductor surfaces induced by laser radiation / A.Yu. Bonchik, B.J. Dacko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 311-315. — Бібліогр.: 8 назв. — англ. 1560-8034 PACS: 72.20; 72.40; 73.20; 42.62 http://dspace.nbuv.gov.ua/handle/123456789/121141 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Laser modifications of semiconductors are often realized by pulsed rapid melting and subsequent resolidification. Recently melt instabilities have been discovered in locally melted semiconductor surfaces. We determined that spontaneous segregation of uniform temperature stage of crystal lattice and charge carrier concentration can take place in electron-hole plasma, generated by laser radiation. Besides, there exists a positive feedback between the temperature of crystal lattice and charge carrier concentration in the region of their fluctuation. It causes both amplification of original fluctuation of temperature and generation of quasi-periodic temperature fields of large amplitude in semiconductors. The nonuniform temperature fields determine the features of surface relief formation in a zone of laser radiation action. |
| format |
Article |
| author |
Bonchik, A.Yu. Dacko, B.J. Demchuk, V.I. Kiyak, S.G. Palyvoda, I.P. Shnyr, A.F. |
| spellingShingle |
Bonchik, A.Yu. Dacko, B.J. Demchuk, V.I. Kiyak, S.G. Palyvoda, I.P. Shnyr, A.F. Melt instabilities on semiconductor surfaces induced by laser radiation Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Bonchik, A.Yu. Dacko, B.J. Demchuk, V.I. Kiyak, S.G. Palyvoda, I.P. Shnyr, A.F. |
| author_sort |
Bonchik, A.Yu. |
| title |
Melt instabilities on semiconductor surfaces induced by laser radiation |
| title_short |
Melt instabilities on semiconductor surfaces induced by laser radiation |
| title_full |
Melt instabilities on semiconductor surfaces induced by laser radiation |
| title_fullStr |
Melt instabilities on semiconductor surfaces induced by laser radiation |
| title_full_unstemmed |
Melt instabilities on semiconductor surfaces induced by laser radiation |
| title_sort |
melt instabilities on semiconductor surfaces induced by laser radiation |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121141 |
| citation_txt |
Melt instabilities on semiconductor surfaces induced by laser radiation / A.Yu. Bonchik, B.J. Dacko, V.I. Demchuk, S.G. Kiyak, I.P. Palyvoda, A.F. Shnyr // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 3. — С. 311-315. — Бібліогр.: 8 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:38:46Z |
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