Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers

Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers

Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm...

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Бібліографічні деталі
Дата:2002
Автори: Semenova, G.N., Venger, E.F., Korsunska, N.O., Klad’ko, V.P., Borkovska, L.V., Semtsiv, M.P., Sharibaev, M.B., Kushnirenko, V.I., Sadofyev, Yu.G.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121182
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121182
record_format dspace
spelling irk-123456789-1211822017-06-14T03:06:50Z Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers Semenova, G.N. Venger, E.F. Korsunska, N.O. Klad’ko, V.P. Borkovska, L.V. Semtsiv, M.P. Sharibaev, M.B. Kushnirenko, V.I. Sadofyev, Yu.G. Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm) contain three regions of different structural and optical quality. It is shown that two of these regions (near top surface and near interface ones) contain higher defect density. The nature of luminescence line at 446.1nm (4.2 K) is discussed. It was found that the radiation enhanced defect reactions occurred in the top surface region of epilayer. 2002 Article Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 66.30.Jt, 66.30.Qa, 61.72.Vv, 61.72.Ff, 61.72.Yx http://dspace.nbuv.gov.ua/handle/123456789/121182 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. It was found that the epilayers with thicknesses above some value (>1 μm) contain three regions of different structural and optical quality. It is shown that two of these regions (near top surface and near interface ones) contain higher defect density. The nature of luminescence line at 446.1nm (4.2 K) is discussed. It was found that the radiation enhanced defect reactions occurred in the top surface region of epilayer.
format Article
author Semenova, G.N.
Venger, E.F.
Korsunska, N.O.
Klad’ko, V.P.
Borkovska, L.V.
Semtsiv, M.P.
Sharibaev, M.B.
Kushnirenko, V.I.
Sadofyev, Yu.G.
spellingShingle Semenova, G.N.
Venger, E.F.
Korsunska, N.O.
Klad’ko, V.P.
Borkovska, L.V.
Semtsiv, M.P.
Sharibaev, M.B.
Kushnirenko, V.I.
Sadofyev, Yu.G.
Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Semenova, G.N.
Venger, E.F.
Korsunska, N.O.
Klad’ko, V.P.
Borkovska, L.V.
Semtsiv, M.P.
Sharibaev, M.B.
Kushnirenko, V.I.
Sadofyev, Yu.G.
author_sort Semenova, G.N.
title Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
title_short Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
title_full Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
title_fullStr Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
title_full_unstemmed Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers
title_sort defects and radiation-enhanced defect reactions in znse/(001)gaas mbe layers
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2002
url http://dspace.nbuv.gov.ua/handle/123456789/121182
citation_txt Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers / G.N. Semenova, E.F. Venger, N.O. Korsunska, V.P. Klad’ko, L.V. Borkovska, M.P. Semtsiv, M.B. Sharibaev, V.I. Kushnirenko, Yu.G. Sadofyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 133-137. — Бібліогр.: 13 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:38:50Z
last_indexed 2023-10-18T20:38:50Z
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