Effect of nonuniform doping profile on thermometric performance of diode temperature sensors
A theoretical investigation of the influence of a nonuniform doping concentration to the temperature response curve of diode temperature sensors is presented, which is the first effort in this field important for diffused diodes used as the temperature sensors. The current-voltage characteristic, fr...
Збережено в:
| Дата: | 2002 |
|---|---|
| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
|
| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121193 |
| Теги: |
Додати тег
Немає тегів, Будьте першим, хто поставить тег для цього запису!
|
| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Effect of nonuniform doping profile on thermometric performance of diode temperature sensors / V.N. Sokolov, Yu.М. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 201-211. — Бібліогр.: 25 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121193 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1211932017-06-14T03:07:26Z Effect of nonuniform doping profile on thermometric performance of diode temperature sensors Sokolov, V.N. Shwarts, Yu.M. A theoretical investigation of the influence of a nonuniform doping concentration to the temperature response curve of diode temperature sensors is presented, which is the first effort in this field important for diffused diodes used as the temperature sensors. The current-voltage characteristic, from which the temperature response curve can be obtained, has been calculated using the model of a one-dimensional exponentially graded p-n junction with uniformly doped base region and the diffusion current of the minority carriers through the p-n junction. We show that depending on the doping gradient both contributions to the current coming from the electron and hole current components appear to be of the same order of magnitude. That is in contrast to the prediction of the widely used asymmetrical step junction model. It follows from numerical calculations that an effective shift of the temperature response curve due to nonuniformly doped emitter region in the temperature equivalent can reach the value of about 20 K. The limiting temperature Tm in the temperature response curve that restricts its extent into the high temperature range has been analyzed depending on the excitation current, the doping concentration of the base, and the p-n junction depth. 2002 Article Effect of nonuniform doping profile on thermometric performance of diode temperature sensors / V.N. Sokolov, Yu.М. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 201-211. — Бібліогр.: 25 назв. — англ. 1560-8034 PACS: 72.20.J, 78.55, 78.60 http://dspace.nbuv.gov.ua/handle/123456789/121193 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
A theoretical investigation of the influence of a nonuniform doping concentration to the temperature response curve of diode temperature sensors is presented, which is the first effort in this field important for diffused diodes used as the temperature sensors. The current-voltage characteristic, from which the temperature response curve can be obtained, has been calculated using the model of a one-dimensional exponentially graded p-n junction with uniformly doped base region and the diffusion current of the minority carriers through the p-n junction. We show that depending on the doping gradient both contributions to the current coming from the electron and hole current components appear to be of the same order of magnitude. That is in contrast to the prediction of the widely used asymmetrical step junction model. It follows from numerical calculations that an effective shift of the temperature response curve due to nonuniformly doped emitter region in the temperature equivalent can reach the value of about 20 K. The limiting temperature Tm in the temperature response curve that restricts its extent into the high temperature range has been analyzed depending on the excitation current, the doping concentration of the base, and the p-n junction depth. |
| format |
Article |
| author |
Sokolov, V.N. Shwarts, Yu.M. |
| spellingShingle |
Sokolov, V.N. Shwarts, Yu.M. Effect of nonuniform doping profile on thermometric performance of diode temperature sensors Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Sokolov, V.N. Shwarts, Yu.M. |
| author_sort |
Sokolov, V.N. |
| title |
Effect of nonuniform doping profile on thermometric performance of diode temperature sensors |
| title_short |
Effect of nonuniform doping profile on thermometric performance of diode temperature sensors |
| title_full |
Effect of nonuniform doping profile on thermometric performance of diode temperature sensors |
| title_fullStr |
Effect of nonuniform doping profile on thermometric performance of diode temperature sensors |
| title_full_unstemmed |
Effect of nonuniform doping profile on thermometric performance of diode temperature sensors |
| title_sort |
effect of nonuniform doping profile on thermometric performance of diode temperature sensors |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121193 |
| citation_txt |
Effect of nonuniform doping profile on thermometric performance of diode temperature sensors / V.N. Sokolov, Yu.М. Shwarts // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 201-211. — Бібліогр.: 25 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT sokolovvn effectofnonuniformdopingprofileonthermometricperformanceofdiodetemperaturesensors AT shwartsyum effectofnonuniformdopingprofileonthermometricperformanceofdiodetemperaturesensors |
| first_indexed |
2023-10-18T20:38:51Z |
| last_indexed |
2023-10-18T20:38:51Z |
| _version_ |
1796150746775814144 |