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Polarization properties of the luminescence from silicon nanocrystals

Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above th...

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Main Authors: Diener, J., Kovalev, D., Polisski, G., Koch, F.
Format: Article
Language:English
Published: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Series:Semiconductor Physics Quantum Electronics & Optoelectronics
Online Access:http://dspace.nbuv.gov.ua/handle/123456789/121201
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spelling irk-123456789-1212012017-06-14T03:07:40Z Polarization properties of the luminescence from silicon nanocrystals Diener, J. Kovalev, D. Polisski, G. Koch, F. Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above the detection energy, is not related to a coherent exciton alignment or selective optical excitation of those nanocrystals whose transition dipole moments are oriented parallel to the polarization vector of the exciting light. The experimental results are interpreted in the framework of a dielectric model assuming aspheric nanocrystals. 2000 Article Polarization properties of the luminescence from silicon nanocrystals / J. Diener, D. Kovalev, G. Polisski, F. Koch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 445-448. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 61.82.R, 78.60, 78.66.J http://dspace.nbuv.gov.ua/handle/123456789/121201 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Polarization dependent photoluminescence (PL), time-resolved PL and PL excitation experiments are performed in order to clarify the origin of the linear polarization of the PL of porous silicon excited by linear polarized light. It is shown that this effect, when PL is excited significantly above the detection energy, is not related to a coherent exciton alignment or selective optical excitation of those nanocrystals whose transition dipole moments are oriented parallel to the polarization vector of the exciting light. The experimental results are interpreted in the framework of a dielectric model assuming aspheric nanocrystals.
format Article
author Diener, J.
Kovalev, D.
Polisski, G.
Koch, F.
spellingShingle Diener, J.
Kovalev, D.
Polisski, G.
Koch, F.
Polarization properties of the luminescence from silicon nanocrystals
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Diener, J.
Kovalev, D.
Polisski, G.
Koch, F.
author_sort Diener, J.
title Polarization properties of the luminescence from silicon nanocrystals
title_short Polarization properties of the luminescence from silicon nanocrystals
title_full Polarization properties of the luminescence from silicon nanocrystals
title_fullStr Polarization properties of the luminescence from silicon nanocrystals
title_full_unstemmed Polarization properties of the luminescence from silicon nanocrystals
title_sort polarization properties of the luminescence from silicon nanocrystals
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2000
url http://dspace.nbuv.gov.ua/handle/123456789/121201
citation_txt Polarization properties of the luminescence from silicon nanocrystals / J. Diener, D. Kovalev, G. Polisski, F. Koch // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 445-448. — Бібліогр.: 11 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT dienerj polarizationpropertiesoftheluminescencefromsiliconnanocrystals
AT kovalevd polarizationpropertiesoftheluminescencefromsiliconnanocrystals
AT polisskig polarizationpropertiesoftheluminescencefromsiliconnanocrystals
AT kochf polarizationpropertiesoftheluminescencefromsiliconnanocrystals
first_indexed 2023-10-18T20:38:51Z
last_indexed 2023-10-18T20:38:51Z
_version_ 1796150747620966400