The influence of non-uniform deformation on photoelectric properties of crystalline silicon
Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the photoconductivity spectrum drop in the short-wave region when illuminating the st...
Збережено в:
| Дата: | 2000 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121205 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The influence of non-uniform deformation on photoelectric properties of crystalline silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 453-455. — Бібліогр.: 9 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1212052017-06-14T03:07:20Z The influence of non-uniform deformation on photoelectric properties of crystalline silicon Vakulenko, O.V. Kondratenko, S.V. Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the photoconductivity spectrum drop in the short-wave region when illuminating the stretched surface. Under constant deformation conditions the PME spectrum form is changed only in the long-wave region. Obtained data are explained by diffusion length decreasing as a consequence of decreasing diffusion coefficient under the influence of a strain gradient. 2000 Article The influence of non-uniform deformation on photoelectric properties of crystalline silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 453-455. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 72.40. http://dspace.nbuv.gov.ua/handle/123456789/121205 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the photoconductivity spectrum drop in the short-wave region when illuminating the stretched surface. Under constant deformation conditions the PME spectrum form is changed only in the long-wave region. Obtained data are explained by diffusion length decreasing as a consequence of decreasing diffusion coefficient under the influence of a strain gradient. |
| format |
Article |
| author |
Vakulenko, O.V. Kondratenko, S.V. |
| spellingShingle |
Vakulenko, O.V. Kondratenko, S.V. The influence of non-uniform deformation on photoelectric properties of crystalline silicon Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Vakulenko, O.V. Kondratenko, S.V. |
| author_sort |
Vakulenko, O.V. |
| title |
The influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| title_short |
The influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| title_full |
The influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| title_fullStr |
The influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| title_full_unstemmed |
The influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| title_sort |
influence of non-uniform deformation on photoelectric properties of crystalline silicon |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121205 |
| citation_txt |
The influence of non-uniform deformation on photoelectric properties of crystalline silicon / O.V. Vakulenko, S.V. Kondratenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 453-455. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:38:51Z |
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2023-10-18T20:38:51Z |
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