Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator

Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shif...

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Бібліографічні деталі
Дата:2015
Автори: Sachenko, A.V., Kostylyov, V.P., Korkishko, R.M., Kulish, M.R., Sokolovskyi, I.O., Vlasiuk, V.M., Khomenko, D.V.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121212
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
id irk-123456789-121212
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spelling irk-123456789-1212122017-06-14T03:06:43Z Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator Sachenko, A.V. Kostylyov, V.P. Korkishko, R.M. Kulish, M.R. Sokolovskyi, I.O. Vlasiuk, V.M. Khomenko, D.V. Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shift of simulator spectrum to the higher wavelengths region as compared to the Sun one. This effect leads to a reduction in efficiency decrease for simulated sunlight with the increase of temperature. It should be taken into account in efficiency loss calculation with increase in the operating temperature. It has been shown that the results of theoretical modeling the temperature dependences for the short-circuit current density, open-circuit voltage and photoconversion efficiency are in good agreement with the experimental data obtained using the sunlight simulator. These results could be used to develop methods for investigation of temperature dependences of solar cell characteristics by using various sunlight simulators. 2015 Article Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.259 PACS 88.40.hj, 88.40.jj http://dspace.nbuv.gov.ua/handle/123456789/121212 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Characteristics of basic silicon solar cells are experimentally researched and theoretically modeled using photons of incandescent lamps as sunlight simulator. It was established that increasing temperature evokes significant acceleration of short-circuit current growth. The reason of it is the shift of simulator spectrum to the higher wavelengths region as compared to the Sun one. This effect leads to a reduction in efficiency decrease for simulated sunlight with the increase of temperature. It should be taken into account in efficiency loss calculation with increase in the operating temperature. It has been shown that the results of theoretical modeling the temperature dependences for the short-circuit current density, open-circuit voltage and photoconversion efficiency are in good agreement with the experimental data obtained using the sunlight simulator. These results could be used to develop methods for investigation of temperature dependences of solar cell characteristics by using various sunlight simulators.
format Article
author Sachenko, A.V.
Kostylyov, V.P.
Korkishko, R.M.
Kulish, M.R.
Sokolovskyi, I.O.
Vlasiuk, V.M.
Khomenko, D.V.
spellingShingle Sachenko, A.V.
Kostylyov, V.P.
Korkishko, R.M.
Kulish, M.R.
Sokolovskyi, I.O.
Vlasiuk, V.M.
Khomenko, D.V.
Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Sachenko, A.V.
Kostylyov, V.P.
Korkishko, R.M.
Kulish, M.R.
Sokolovskyi, I.O.
Vlasiuk, V.M.
Khomenko, D.V.
author_sort Sachenko, A.V.
title Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
title_short Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
title_full Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
title_fullStr Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
title_full_unstemmed Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
title_sort peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/121212
citation_txt Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator / A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 259-266. — Бібліогр.: 18 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:38:55Z
last_indexed 2023-10-18T20:38:55Z
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