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Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum
Cd₀.₂₅Hg₀.₇₅Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown that the used method enables one to receive films of CdxHg₁₋xSe solid solutions...
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Series: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Online Access: | http://dspace.nbuv.gov.ua/handle/123456789/121216 |
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irk-123456789-1212162017-06-14T03:07:50Z Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum Gritsook, B.N. Fodchoock, I.M. Nichiy, S.V. Paranchich, U.S. Politanskiy, R.L. Cd₀.₂₅Hg₀.₇₅Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown that the used method enables one to receive films of CdxHg₁₋xSe solid solutions close to bulk material by their properties. 2000 Article Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum / B.N. Gritsook, I.M. Fodchoock, S.V. Nichiy, U.S. Paranchich, R.L. Politanskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 460-462. — Бібліогр.: 9 назв. — англ. 1560-8034 PACS: 70.61.J http://dspace.nbuv.gov.ua/handle/123456789/121216 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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English |
| description |
Cd₀.₂₅Hg₀.₇₅Se films received by laser evaporation method in conditions of static vacuum are investigated. Optimum temperature of a substrate is ascertained using structural and electrophysical measurements. It is shown that the used method enables one to receive films of CdxHg₁₋xSe solid solutions close to bulk material by their properties. |
| format |
Article |
| author |
Gritsook, B.N. Fodchoock, I.M. Nichiy, S.V. Paranchich, U.S. Politanskiy, R.L. |
| spellingShingle |
Gritsook, B.N. Fodchoock, I.M. Nichiy, S.V. Paranchich, U.S. Politanskiy, R.L. Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Gritsook, B.N. Fodchoock, I.M. Nichiy, S.V. Paranchich, U.S. Politanskiy, R.L. |
| author_sort |
Gritsook, B.N. |
| title |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum |
| title_short |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum |
| title_full |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum |
| title_fullStr |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum |
| title_full_unstemmed |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum |
| title_sort |
growing cd₀.₂₅hg₀.₇₅se layers by laser evaporation in static vacuum |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121216 |
| citation_txt |
Growing Cd₀.₂₅Hg₀.₇₅Se layers by laser evaporation in static vacuum / B.N. Gritsook, I.M. Fodchoock, S.V. Nichiy, U.S. Paranchich, R.L. Politanskiy // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 460-462. — Бібліогр.: 9 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
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| first_indexed |
2023-10-18T20:38:52Z |
| last_indexed |
2023-10-18T20:38:52Z |
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1796150749209559040 |