Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-r...
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Дата: | 2000 |
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Автори: | , , |
Формат: | Стаття |
Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121224 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ. |
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irk-123456789-1212242017-06-14T03:07:41Z Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods Zymierska, D. Auleytner, J. Dmitruk, N. The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-ray grazing incidence reflectivity, atomic force microscopy, scanning tunneling microscopy, optical specular reflection, and profilometric methods were complementary used. The application of these methods allowed to reveal the details of differences in the surface morphology varied with the way of its preparation. 2000 Article Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 61.10.Kw, 61.16.Ch, 68.35.Bs, 78.20.Ci, S7.12 http://dspace.nbuv.gov.ua/handle/123456789/121224 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-ray grazing incidence reflectivity, atomic force microscopy, scanning tunneling microscopy, optical specular reflection, and profilometric methods were complementary used. The application of these methods allowed to reveal the details of differences in the surface morphology varied with the way of its preparation. |
format |
Article |
author |
Zymierska, D. Auleytner, J. Dmitruk, N. |
spellingShingle |
Zymierska, D. Auleytner, J. Dmitruk, N. Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Zymierska, D. Auleytner, J. Dmitruk, N. |
author_sort |
Zymierska, D. |
title |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods |
title_short |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods |
title_full |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods |
title_fullStr |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods |
title_full_unstemmed |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods |
title_sort |
investigations of surface morphology and microrelief of gaas single crystals by complementary methods |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2000 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/121224 |
citation_txt |
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT zymierskad investigationsofsurfacemorphologyandmicroreliefofgaassinglecrystalsbycomplementarymethods AT auleytnerj investigationsofsurfacemorphologyandmicroreliefofgaassinglecrystalsbycomplementarymethods AT dmitrukn investigationsofsurfacemorphologyandmicroreliefofgaassinglecrystalsbycomplementarymethods |
first_indexed |
2023-10-18T20:38:52Z |
last_indexed |
2023-10-18T20:38:52Z |
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1796150750053662720 |