Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods

The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-r...

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Дата:2000
Автори: Zymierska, D., Auleytner, J., Dmitruk, N.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121224
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1212242017-06-14T03:07:41Z Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods Zymierska, D. Auleytner, J. Dmitruk, N. The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-ray grazing incidence reflectivity, atomic force microscopy, scanning tunneling microscopy, optical specular reflection, and profilometric methods were complementary used. The application of these methods allowed to reveal the details of differences in the surface morphology varied with the way of its preparation. 2000 Article Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 61.10.Kw, 61.16.Ch, 68.35.Bs, 78.20.Ci, S7.12 http://dspace.nbuv.gov.ua/handle/123456789/121224 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The paper presents the study of morphology and roughness of (100) surfaces of GaAs single crystals grown by the Czochralski method. The surfaces were prepared in a different way: mechanical polishing, chemomechanical polishing, mechanical grinding, wet polishing etching, anisotropic etching. The X-ray grazing incidence reflectivity, atomic force microscopy, scanning tunneling microscopy, optical specular reflection, and profilometric methods were complementary used. The application of these methods allowed to reveal the details of differences in the surface morphology varied with the way of its preparation.
format Article
author Zymierska, D.
Auleytner, J.
Dmitruk, N.
spellingShingle Zymierska, D.
Auleytner, J.
Dmitruk, N.
Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Zymierska, D.
Auleytner, J.
Dmitruk, N.
author_sort Zymierska, D.
title Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
title_short Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
title_full Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
title_fullStr Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
title_full_unstemmed Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods
title_sort investigations of surface morphology and microrelief of gaas single crystals by complementary methods
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2000
url http://dspace.nbuv.gov.ua/handle/123456789/121224
citation_txt Investigations of surface morphology and microrelief of GaAs single crystals by complementary methods / D. Zymierska, J. Auleytner, N. Dmitruk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 438-444. — Бібліогр.: 15 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT zymierskad investigationsofsurfacemorphologyandmicroreliefofgaassinglecrystalsbycomplementarymethods
AT auleytnerj investigationsofsurfacemorphologyandmicroreliefofgaassinglecrystalsbycomplementarymethods
AT dmitrukn investigationsofsurfacemorphologyandmicroreliefofgaassinglecrystalsbycomplementarymethods
first_indexed 2023-10-18T20:38:52Z
last_indexed 2023-10-18T20:38:52Z
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