Metal-dielectric black matrix for display devices

• Дата: 2000
• Автори: Chang Won Park, Joon-Bae Lee, Young Rag Do, Shepeliavyi, P., Michailovska, K., Indutnyy, I., Kudryavtsev, O.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2000
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/121226
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Metal-dielectric black matrix for display devices / Chang Won Park, Joon-Bae Lee, Young Rag Do, P. Shepeliavyi, K. Michailovs'ka, I. Indutnyy, O. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 496-499. — Бібліогр.: 6 назв. — англ.

Technology of metal-dielectric coating deposition for manufacturing a light-absorbing black matrix on a panel of color cathode-ray tubes is described. The coating is prepared using thermo-vacuum evaporation of SiO-Cr mixture. That yields in a thin-layer non-uniform (by its composition) structure SiOx-Cr. It is shown that the coating prepared in this way is achromatic and has low reflectivity (~1%) from the side of a transparent panel. The index of diffuse light scattering measured for such metal-dielectric coating does not exceed 0.1% in the spectral range of 400-700 nm. It is shown that black matrix based on the coating SiOx-Cr can be produced using the methods of direct or lift-off photolithography, with organic or non-organic photoresist. Color CRT with these metal-dielectric black matrixes on their panels have increased image contrast as compared with the colloid-graphite ones.