Metal-dielectric black matrix for display devices
Technology of metal-dielectric coating deposition for manufacturing a light-absorbing black matrix on a panel of color cathode-ray tubes is described. The coating is prepared using thermo-vacuum evaporation of SiO-Cr mixture. That yields in a thin-layer non-uniform (by its composition) structure SiO...
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| Дата: | 2000 |
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| Автори: | , , , , , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2000
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121226 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Metal-dielectric black matrix for display devices / Chang Won Park, Joon-Bae Lee, Young Rag Do, P. Shepeliavyi, K. Michailovs'ka, I. Indutnyy, O. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 496-499. — Бібліогр.: 6 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1212262017-06-14T03:07:43Z Metal-dielectric black matrix for display devices Chang Won Park Joon-Bae Lee Young Rag Do Shepeliavyi, P. Michailovska, K. Indutnyy, I. Kudryavtsev, O. Technology of metal-dielectric coating deposition for manufacturing a light-absorbing black matrix on a panel of color cathode-ray tubes is described. The coating is prepared using thermo-vacuum evaporation of SiO-Cr mixture. That yields in a thin-layer non-uniform (by its composition) structure SiOx-Cr. It is shown that the coating prepared in this way is achromatic and has low reflectivity (~1%) from the side of a transparent panel. The index of diffuse light scattering measured for such metal-dielectric coating does not exceed 0.1% in the spectral range of 400-700 nm. It is shown that black matrix based on the coating SiOx-Cr can be produced using the methods of direct or lift-off photolithography, with organic or non-organic photoresist. Color CRT with these metal-dielectric black matrixes on their panels have increased image contrast as compared with the colloid-graphite ones. 2000 Article Metal-dielectric black matrix for display devices / Chang Won Park, Joon-Bae Lee, Young Rag Do, P. Shepeliavyi, K. Michailovs'ka, I. Indutnyy, O. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 496-499. — Бібліогр.: 6 назв. — англ. 1560-8034 PACS: 42.79.K, 85.40.H http://dspace.nbuv.gov.ua/handle/123456789/121226 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Technology of metal-dielectric coating deposition for manufacturing a light-absorbing black matrix on a panel of color cathode-ray tubes is described. The coating is prepared using thermo-vacuum evaporation of SiO-Cr mixture. That yields in a thin-layer non-uniform (by its composition) structure SiOx-Cr. It is shown that the coating prepared in this way is achromatic and has low reflectivity (~1%) from the side of a transparent panel. The index of diffuse light scattering measured for such metal-dielectric coating does not exceed 0.1% in the spectral range of 400-700 nm. It is shown that black matrix based on the coating SiOx-Cr can be produced using the methods of direct or lift-off photolithography, with organic or non-organic photoresist. Color CRT with these metal-dielectric black matrixes on their panels have increased image contrast as compared with the colloid-graphite ones. |
| format |
Article |
| author |
Chang Won Park Joon-Bae Lee Young Rag Do Shepeliavyi, P. Michailovska, K. Indutnyy, I. Kudryavtsev, O. |
| spellingShingle |
Chang Won Park Joon-Bae Lee Young Rag Do Shepeliavyi, P. Michailovska, K. Indutnyy, I. Kudryavtsev, O. Metal-dielectric black matrix for display devices Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Chang Won Park Joon-Bae Lee Young Rag Do Shepeliavyi, P. Michailovska, K. Indutnyy, I. Kudryavtsev, O. |
| author_sort |
Chang Won Park |
| title |
Metal-dielectric black matrix for display devices |
| title_short |
Metal-dielectric black matrix for display devices |
| title_full |
Metal-dielectric black matrix for display devices |
| title_fullStr |
Metal-dielectric black matrix for display devices |
| title_full_unstemmed |
Metal-dielectric black matrix for display devices |
| title_sort |
metal-dielectric black matrix for display devices |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2000 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121226 |
| citation_txt |
Metal-dielectric black matrix for display devices / Chang Won Park, Joon-Bae Lee, Young Rag Do, P. Shepeliavyi, K. Michailovs'ka, I. Indutnyy, O. Kudryavtsev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 4. — С. 496-499. — Бібліогр.: 6 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:38:56Z |
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