Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance

Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance

The influence of the annealing (at Тanneal. = 1200 °C) and different rates of cooling (from Тanneal. to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, which were grown by means of various technologies, have been investigated. It...

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Дата:2002
Автори: Baranskyy, P.I., Gaydar, G.P., Litovchenko, P.G.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121238
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance / P.I. Baranskyy, G.P. Gaydar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 231-234. — Бібліогр.: 15 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1212382017-06-14T03:07:49Z Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance Baranskyy, P.I. Gaydar, G.P. Litovchenko, P.G. The influence of the annealing (at Тanneal. = 1200 °C) and different rates of cooling (from Тanneal. to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, which were grown by means of various technologies, have been investigated. It means that investigated crystals had different concentrations of not only doping impurity (phosphorus) but also background impurity (oxygen atoms) in their bulk, too. It was shown that the impurity complexes (clusters) of (SiO)x, (SiO₂)х or SixOy types that arise in n-Si monocrystals with increased oxygen concentrations at annealing (Тanneal. = 1200 °C) results in essential increase of magnetoresistance (approximately 2...2.5 times as much). The influence of mentioned above clusters on the magnetoresistance practically excludes its saturation in classically strong magnetic fields and forms the dependence of on magnetic field H in this region in the following form . 2002 Article Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance / P.I. Baranskyy, G.P. Gaydar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 231-234. — Бібліогр.: 15 назв. — англ. 1560-8034 PACS: 61.72.C; 72.20.My http://dspace.nbuv.gov.ua/handle/123456789/121238 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The influence of the annealing (at Тanneal. = 1200 °C) and different rates of cooling (from Тanneal. to room temperature) on magnetoresistance and Hall effect of the n-Si:P monocrystals with different specific resistance, which were grown by means of various technologies, have been investigated. It means that investigated crystals had different concentrations of not only doping impurity (phosphorus) but also background impurity (oxygen atoms) in their bulk, too. It was shown that the impurity complexes (clusters) of (SiO)x, (SiO₂)х or SixOy types that arise in n-Si monocrystals with increased oxygen concentrations at annealing (Тanneal. = 1200 °C) results in essential increase of magnetoresistance (approximately 2...2.5 times as much). The influence of mentioned above clusters on the magnetoresistance practically excludes its saturation in classically strong magnetic fields and forms the dependence of on magnetic field H in this region in the following form .
format Article
author Baranskyy, P.I.
Gaydar, G.P.
Litovchenko, P.G.
spellingShingle Baranskyy, P.I.
Gaydar, G.P.
Litovchenko, P.G.
Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Baranskyy, P.I.
Gaydar, G.P.
Litovchenko, P.G.
author_sort Baranskyy, P.I.
title Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
title_short Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
title_full Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
title_fullStr Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
title_full_unstemmed Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance
title_sort influence of the annealing of silicon crystals at 1200 °c on the hall effect and magnetoresistance
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2002
url http://dspace.nbuv.gov.ua/handle/123456789/121238
citation_txt Influence of the annealing of silicon crystals at 1200 °C on the Hall effect and magnetoresistance / P.I. Baranskyy, G.P. Gaydar, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 231-234. — Бібліогр.: 15 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
work_keys_str_mv AT baranskyypi influenceoftheannealingofsiliconcrystalsat1200conthehalleffectandmagnetoresistance
AT gaydargp influenceoftheannealingofsiliconcrystalsat1200conthehalleffectandmagnetoresistance
AT litovchenkopg influenceoftheannealingofsiliconcrystalsat1200conthehalleffectandmagnetoresistance
first_indexed 2023-10-18T20:38:58Z
last_indexed 2023-10-18T20:38:58Z
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