The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films
Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibility behavior of alloy films. It was shown the existence of critical thickness for the GexSi₁-x, Ge₁-xSnx, Si₁-xSnx, Si₁-xCx thin...
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| Дата: | 2002 |
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| Автори: | , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121241 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films / V.G. Deibuk, Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 247-253. — Бібліогр.: 22 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121241 |
|---|---|
| record_format |
dspace |
| spelling |
irk-123456789-1212412017-06-14T03:07:54Z The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films Deibuk, V.G. Korolyuk, Yu.G. Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibility behavior of alloy films. It was shown the existence of critical thickness for the GexSi₁-x, Ge₁-xSnx, Si₁-xSnx, Si₁-xCx thin solid films. The results of the classical molecular dynamic simulations are in good agreement with experimental data and other ab-initio calculations. The effect of layer thickness have great influence on the miscibility gap. 2002 Article The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films / V.G. Deibuk, Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 247-253. — Бібліогр.: 22 назв. — англ. 1560-8034 PACS: 64.75.+g , 65.50.+m , 68.60.Dv http://dspace.nbuv.gov.ua/handle/123456789/121241 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Structural and thermodynamic properties of IV-IV solid solutions were calculated by molecular dynamics simulation. Biaxial strains are extremely important for the miscibility behavior of alloy films. It was shown the existence of critical thickness for the GexSi₁-x, Ge₁-xSnx, Si₁-xSnx, Si₁-xCx thin solid films. The results of the classical molecular dynamic simulations are in good agreement with experimental data and other ab-initio calculations. The effect of layer thickness have great influence on the miscibility gap. |
| format |
Article |
| author |
Deibuk, V.G. Korolyuk, Yu.G. |
| spellingShingle |
Deibuk, V.G. Korolyuk, Yu.G. The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Deibuk, V.G. Korolyuk, Yu.G. |
| author_sort |
Deibuk, V.G. |
| title |
The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films |
| title_short |
The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films |
| title_full |
The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films |
| title_fullStr |
The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films |
| title_full_unstemmed |
The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films |
| title_sort |
effect of strain on the thermodynamic properties of ge-si, ge-sn, si-sn, si-c thin solid films |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121241 |
| citation_txt |
The effect of strain on the thermodynamic properties of Ge-Si, Ge-Sn, Si-Sn, Si-C thin solid films / V.G. Deibuk, Yu.G. Korolyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 247-253. — Бібліогр.: 22 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT deibukvg theeffectofstrainonthethermodynamicpropertiesofgesigesnsisnsicthinsolidfilms AT korolyukyug theeffectofstrainonthethermodynamicpropertiesofgesigesnsisnsicthinsolidfilms AT deibukvg effectofstrainonthethermodynamicpropertiesofgesigesnsisnsicthinsolidfilms AT korolyukyug effectofstrainonthethermodynamicpropertiesofgesigesnsisnsicthinsolidfilms |
| first_indexed |
2023-10-18T20:38:58Z |
| last_indexed |
2023-10-18T20:38:58Z |
| _version_ |
1796150751850921984 |