Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics
Undoped as well as Li-, Ag-, Cu- and Zn-doped MgxZn₁₋xO ceramics with x = 0–0.20 were sintered at 1000 °C. Defect-related photoluminescence (PL) and PL excitation spectra were measured at room temperature in 400–800 nm and 250–400 nm spectral ranges, accordingly. Two types of PL bands were observed:...
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| Дата: | 2015 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121244 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 344-348. — Бібліогр.: 17 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121244 |
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dspace |
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irk-123456789-1212442017-06-14T03:07:49Z Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics Markevich, I.V. Stara, T.R. Bondarenko, V.O. Undoped as well as Li-, Ag-, Cu- and Zn-doped MgxZn₁₋xO ceramics with x = 0–0.20 were sintered at 1000 °C. Defect-related photoluminescence (PL) and PL excitation spectra were measured at room temperature in 400–800 nm and 250–400 nm spectral ranges, accordingly. Two types of PL bands were observed: i) the bands, spectral positions of which were not influenced by the Mg content (Cu-related as well as selfactivated orange and red ones); ii) the bands, spectral positions of which exhibited some blueshift with increasing Mg content (Li- and Ag-related and self-activated green ones). It has been shown that used doping gives the possibility to obtain the phosphor with intense visible emission within the blue-yellow spectral range. 2015 Article Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 344-348. — Бібліогр.: 17 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.03.344 PACS 81.05.Dz, 81.05.Je http://dspace.nbuv.gov.ua/handle/123456789/121244 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Undoped as well as Li-, Ag-, Cu- and Zn-doped MgxZn₁₋xO ceramics with x = 0–0.20 were sintered at 1000 °C. Defect-related photoluminescence (PL) and PL excitation spectra were measured at room temperature in 400–800 nm and 250–400 nm spectral ranges, accordingly. Two types of PL bands were observed: i) the bands, spectral positions of which were not influenced by the Mg content (Cu-related as well as selfactivated orange and red ones); ii) the bands, spectral positions of which exhibited some blueshift with increasing Mg content (Li- and Ag-related and self-activated green ones). It has been shown that used doping gives the possibility to obtain the phosphor with intense visible emission within the blue-yellow spectral range. |
| format |
Article |
| author |
Markevich, I.V. Stara, T.R. Bondarenko, V.O. |
| spellingShingle |
Markevich, I.V. Stara, T.R. Bondarenko, V.O. Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Markevich, I.V. Stara, T.R. Bondarenko, V.O. |
| author_sort |
Markevich, I.V. |
| title |
Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics |
| title_short |
Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics |
| title_full |
Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics |
| title_fullStr |
Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics |
| title_full_unstemmed |
Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics |
| title_sort |
influence of mg content on defect-related luminescence of undoped and doped wurtzite mgzno ceramics |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2015 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121244 |
| citation_txt |
Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 344-348. — Бібліогр.: 17 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:38:59Z |
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2023-10-18T20:38:59Z |
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