Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics

• Дата: 2015
• Автори: Markevich, I.V., Stara, T.R., Bondarenko, V.O.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/121244
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics / I.V. Markevich, T.R. Stara, V.O. Bondarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 344-348. — Бібліогр.: 17 назв. — англ.

Undoped as well as Li-, Ag-, Cu- and Zn-doped MgxZn₁₋xO ceramics with x = 0–0.20 were sintered at 1000 °C. Defect-related photoluminescence (PL) and PL excitation spectra were measured at room temperature in 400–800 nm and 250–400 nm spectral ranges, accordingly. Two types of PL bands were observed:...