Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality

In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. These investigations were founded on the model dispersion law that most co...

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Бібліографічні деталі
Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:2005
Автор: Tovstyuk, N.K.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2005
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121251
Теги: Додати тег
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Цитувати:Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality / N.K. Tovstyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 32-36. — Бібліогр.: 13 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. These investigations were founded on the model dispersion law that most completely governs the peculiarities of the structure. Here, we studied the character of alternating oscillations of the potential screened by interelectron interaction, namely, by its anisotropy depending on microscopic parameters that determine the shape of isoenergetic surface and the degree of quasi-two-dimensionality. It is shown that the obtained potential, in comparison with similar results for isotropic Fermi gas, oscillates at smaller distances with amplitude of an order of magnitude higher and with a period of an order of that smaller.