Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality
In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. These investigations were founded on the model dispersion law that most co...
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| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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| Дата: | 2005 |
| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2005
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121251 |
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| Цитувати: | Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality / N.K. Tovstyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 32-36. — Бібліогр.: 13 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121251 |
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dspace |
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irk-123456789-1212512017-06-14T03:02:59Z Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality Tovstyuk, N.K. In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. These investigations were founded on the model dispersion law that most completely governs the peculiarities of the structure. Here, we studied the character of alternating oscillations of the potential screened by interelectron interaction, namely, by its anisotropy depending on microscopic parameters that determine the shape of isoenergetic surface and the degree of quasi-two-dimensionality. It is shown that the obtained potential, in comparison with similar results for isotropic Fermi gas, oscillates at smaller distances with amplitude of an order of magnitude higher and with a period of an order of that smaller. 2005 Article Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality / N.K. Tovstyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 32-36. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 73.20 Dx, 21.60 Jz http://dspace.nbuv.gov.ua/handle/123456789/121251 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. These investigations were founded on the model dispersion law that most completely governs the peculiarities of the structure. Here, we studied the character of alternating oscillations of the potential screened by interelectron interaction, namely, by its anisotropy depending on microscopic parameters that determine the shape of isoenergetic surface and the degree of quasi-two-dimensionality. It is shown that the obtained potential, in comparison with similar results for isotropic Fermi gas, oscillates at smaller distances with amplitude of an order of magnitude higher and with a period of an order of that smaller. |
| format |
Article |
| author |
Tovstyuk, N.K. |
| spellingShingle |
Tovstyuk, N.K. Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Tovstyuk, N.K. |
| author_sort |
Tovstyuk, N.K. |
| title |
Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality |
| title_short |
Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality |
| title_full |
Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality |
| title_fullStr |
Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality |
| title_full_unstemmed |
Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality |
| title_sort |
screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2005 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121251 |
| citation_txt |
Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality / N.K. Tovstyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 32-36. — Бібліогр.: 13 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:37:40Z |
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2023-10-18T20:37:40Z |
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1796150699674828800 |