Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods

The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and H₂O₂ – HBr – organic solvent has been studied. The surface states after chemic...

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Бібліографічні деталі
Дата:2015
Автори: Stanetska, А.S., Tomashyk, V.N., Stratiychuk, І.B., Tomashyk, Z.F., Kravetskyy, M.Yu., Galkin, S.N.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2015
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121267
Теги: Додати тег
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods / А.S. Stanetska, V.N. Tomashyk, І.B. Stratiychuk, Z.F. Tomashyk, M.Yu. Kravetskyy, S.N. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 416-421. — Бібліогр.: 16 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1212672017-06-14T03:07:55Z Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods Stanetska, А.S. Tomashyk, V.N. Stratiychuk, І.B. Tomashyk, Z.F. Kravetskyy, M.Yu. Galkin, S.N. The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and H₂O₂ – HBr – organic solvent has been studied. The surface states after chemical etching have been investigated using electron, metallographic and atomic force microscopy, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemical-mechanical polishing of investigated materials has been made. Efficient methods for washing samples solutions have been developed after different types of ZnSe surface treatment: cutting of the crystal, mechanical surface treatment, chemical removing the surface damaged layer. 2015 Article Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods / А.S. Stanetska, V.N. Tomashyk, І.B. Stratiychuk, Z.F. Tomashyk, M.Yu. Kravetskyy, S.N. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 416-421. — Бібліогр.: 16 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.416 PACS 81.65.Cf http://dspace.nbuv.gov.ua/handle/123456789/121267 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and H₂O₂ – HBr – organic solvent has been studied. The surface states after chemical etching have been investigated using electron, metallographic and atomic force microscopy, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemical-mechanical polishing of investigated materials has been made. Efficient methods for washing samples solutions have been developed after different types of ZnSe surface treatment: cutting of the crystal, mechanical surface treatment, chemical removing the surface damaged layer.
format Article
author Stanetska, А.S.
Tomashyk, V.N.
Stratiychuk, І.B.
Tomashyk, Z.F.
Kravetskyy, M.Yu.
Galkin, S.N.
spellingShingle Stanetska, А.S.
Tomashyk, V.N.
Stratiychuk, І.B.
Tomashyk, Z.F.
Kravetskyy, M.Yu.
Galkin, S.N.
Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Stanetska, А.S.
Tomashyk, V.N.
Stratiychuk, І.B.
Tomashyk, Z.F.
Kravetskyy, M.Yu.
Galkin, S.N.
author_sort Stanetska, А.S.
title Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
title_short Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
title_full Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
title_fullStr Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
title_full_unstemmed Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
title_sort development, optimization and improvement of znse crystal surfaces mechanical and chemical treatment and washing methods
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2015
url http://dspace.nbuv.gov.ua/handle/123456789/121267
citation_txt Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods / А.S. Stanetska, V.N. Tomashyk, І.B. Stratiychuk, Z.F. Tomashyk, M.Yu. Kravetskyy, S.N. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 416-421. — Бібліогр.: 16 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:02Z
last_indexed 2023-10-18T20:39:02Z
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