Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods
The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and H₂O₂ – HBr – organic solvent has been studied. The surface states after chemic...
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Дата: | 2015 |
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Автори: | , , , , , |
Формат: | Стаття |
Мова: | English |
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Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121267 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods / А.S. Stanetska, V.N. Tomashyk, І.B. Stratiychuk, Z.F. Tomashyk, M.Yu. Kravetskyy, S.N. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 416-421. — Бібліогр.: 16 назв. — англ. |
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irk-123456789-1212672017-06-14T03:07:55Z Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods Stanetska, А.S. Tomashyk, V.N. Stratiychuk, І.B. Tomashyk, Z.F. Kravetskyy, M.Yu. Galkin, S.N. The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and H₂O₂ – HBr – organic solvent has been studied. The surface states after chemical etching have been investigated using electron, metallographic and atomic force microscopy, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemical-mechanical polishing of investigated materials has been made. Efficient methods for washing samples solutions have been developed after different types of ZnSe surface treatment: cutting of the crystal, mechanical surface treatment, chemical removing the surface damaged layer. 2015 Article Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods / А.S. Stanetska, V.N. Tomashyk, І.B. Stratiychuk, Z.F. Tomashyk, M.Yu. Kravetskyy, S.N. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 416-421. — Бібліогр.: 16 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.416 PACS 81.65.Cf http://dspace.nbuv.gov.ua/handle/123456789/121267 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
language |
English |
description |
The process of cutting, mechanical and chemical treatment of the undoped and doped ZnSe crystal surface has been studied. The chemical interaction of zinc selenide surface with bromine emerging solutions of H₂O₂ – HBr and H₂O₂ – HBr – organic solvent has been studied. The surface states after chemical etching have been investigated using electron, metallographic and atomic force microscopy, and it was shown that the surface state is improved after chemical etching. Etchant selection to develop slow polishing compositions for chemical-mechanical polishing of investigated materials has been made. Efficient methods for washing samples solutions have been developed after different types of ZnSe surface treatment: cutting of the crystal, mechanical surface treatment, chemical removing the surface damaged layer. |
format |
Article |
author |
Stanetska, А.S. Tomashyk, V.N. Stratiychuk, І.B. Tomashyk, Z.F. Kravetskyy, M.Yu. Galkin, S.N. |
spellingShingle |
Stanetska, А.S. Tomashyk, V.N. Stratiychuk, І.B. Tomashyk, Z.F. Kravetskyy, M.Yu. Galkin, S.N. Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Stanetska, А.S. Tomashyk, V.N. Stratiychuk, І.B. Tomashyk, Z.F. Kravetskyy, M.Yu. Galkin, S.N. |
author_sort |
Stanetska, А.S. |
title |
Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods |
title_short |
Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods |
title_full |
Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods |
title_fullStr |
Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods |
title_full_unstemmed |
Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods |
title_sort |
development, optimization and improvement of znse crystal surfaces mechanical and chemical treatment and washing methods |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2015 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/121267 |
citation_txt |
Development, optimization and improvement of ZnSe crystal surfaces mechanical and chemical treatment and washing methods / А.S. Stanetska, V.N. Tomashyk, І.B. Stratiychuk, Z.F. Tomashyk, M.Yu. Kravetskyy, S.N. Galkin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 416-421. — Бібліогр.: 16 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
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first_indexed |
2023-10-18T20:39:02Z |
last_indexed |
2023-10-18T20:39:02Z |
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