Surface polariton excitation in ZnO films deposited using ALD
The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400…1400 cm⁻¹ for the first time. The frequency “windows” with the obtained excited surface phonon...
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Дата: | 2015 |
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Автори: | , , , |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2015
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121268 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Surface polariton excitation in ZnO films deposited using ALD / E.F. Venger, L.Yu. Melnichuk, A.V. Melnichuk, T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 422-427. — Бібліогр.: 15 назв. — англ. |
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irk-123456789-1212682017-06-14T03:06:43Z Surface polariton excitation in ZnO films deposited using ALD Venger, E.F. Melnichuk, L.Yu. Melnichuk, A.V. Semikina, T.V. The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400…1400 cm⁻¹ for the first time. The frequency “windows” with the obtained excited surface phonon and plasmon-phonon polaritons have been found in the measured infrared reflectance spectra. The dispersion response of high and low frequency branches of the IR spectra have been presented. 2015 Article Surface polariton excitation in ZnO films deposited using ALD / E.F. Venger, L.Yu. Melnichuk, A.V. Melnichuk, T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 422-427. — Бібліогр.: 15 назв. — англ. 1560-8034 DOI: 10.15407/spqeo18.04.422 PACS 71.36.+c, 73.20.20.Mf http://dspace.nbuv.gov.ua/handle/123456789/121268 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
collection |
DSpace DC |
language |
English |
description |
The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400…1400 cm⁻¹ for the first time. The frequency “windows” with the obtained excited surface phonon and plasmon-phonon polaritons have been found in the measured infrared reflectance spectra. The dispersion response of high and low frequency branches of the IR spectra have been presented. |
format |
Article |
author |
Venger, E.F. Melnichuk, L.Yu. Melnichuk, A.V. Semikina, T.V. |
spellingShingle |
Venger, E.F. Melnichuk, L.Yu. Melnichuk, A.V. Semikina, T.V. Surface polariton excitation in ZnO films deposited using ALD Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Venger, E.F. Melnichuk, L.Yu. Melnichuk, A.V. Semikina, T.V. |
author_sort |
Venger, E.F. |
title |
Surface polariton excitation in ZnO films deposited using ALD |
title_short |
Surface polariton excitation in ZnO films deposited using ALD |
title_full |
Surface polariton excitation in ZnO films deposited using ALD |
title_fullStr |
Surface polariton excitation in ZnO films deposited using ALD |
title_full_unstemmed |
Surface polariton excitation in ZnO films deposited using ALD |
title_sort |
surface polariton excitation in zno films deposited using ald |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2015 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/121268 |
citation_txt |
Surface polariton excitation in ZnO films deposited using ALD / E.F. Venger, L.Yu. Melnichuk, A.V. Melnichuk, T.V. Semikina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 4. — С. 422-427. — Бібліогр.: 15 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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first_indexed |
2023-10-18T20:39:02Z |
last_indexed |
2023-10-18T20:39:02Z |
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