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Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂
The results of density functional calculations of 2H-NbSe₂ electron energy spectrum with Se vacancies at various concentrations are presented in the article. It is found that volume of the hole-like Fermi surface tends to decrease with increasing concentration of the vacancies. At vacancy concentrat...
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НТК «Інститут монокристалів» НАН України
2016
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irk-123456789-1213042017-06-15T03:04:28Z Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ Mamalui, A.A. Andreeva, O.N. Sinelnik, A.V. Characterization and properties The results of density functional calculations of 2H-NbSe₂ electron energy spectrum with Se vacancies at various concentrations are presented in the article. It is found that volume of the hole-like Fermi surface tends to decrease with increasing concentration of the vacancies. At vacancy concentrations corresponding to the beginning of the phase transition 2H-NbSe₂ -> 4H-NbSe₂ the disappearance of carrier group occurs, that is an electronic topological transition of order 2.5 takes place. 2016 Article Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ / A.A.Mamalui, O.N.Andreeva, A.V.Sinelnik // Functional Materials. — 2016. — Т. 23, № 3. — С. 357-363. — Бібліогр.: 24 назв. — англ. 1027-5495 DOI: dx.doi.org/10.15407/fm23.03.357 http://dspace.nbuv.gov.ua/handle/123456789/121304 en Functional Materials НТК «Інститут монокристалів» НАН України |
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Characterization and properties Characterization and properties |
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Characterization and properties Characterization and properties Mamalui, A.A. Andreeva, O.N. Sinelnik, A.V. Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ Functional Materials |
description |
The results of density functional calculations of 2H-NbSe₂ electron energy spectrum with Se vacancies at various concentrations are presented in the article. It is found that volume of the hole-like Fermi surface tends to decrease with increasing concentration of the vacancies. At vacancy concentrations corresponding to the beginning of the phase transition 2H-NbSe₂ -> 4H-NbSe₂ the disappearance of carrier group occurs, that is an electronic topological transition of order 2.5 takes place. |
format |
Article |
author |
Mamalui, A.A. Andreeva, O.N. Sinelnik, A.V. |
author_facet |
Mamalui, A.A. Andreeva, O.N. Sinelnik, A.V. |
author_sort |
Mamalui, A.A. |
title |
Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ |
title_short |
Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ |
title_full |
Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ |
title_fullStr |
Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ |
title_full_unstemmed |
Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ |
title_sort |
influence of se vacancies on the electron energy spectrum transformation of 2h-nbse₂ |
publisher |
НТК «Інститут монокристалів» НАН України |
publishDate |
2016 |
topic_facet |
Characterization and properties |
url |
http://dspace.nbuv.gov.ua/handle/123456789/121304 |
citation_txt |
Influence of Se vacancies on the electron energy spectrum transformation of 2H-NbSe₂ / A.A.Mamalui, O.N.Andreeva, A.V.Sinelnik // Functional Materials. — 2016. — Т. 23, № 3. — С. 357-363. — Бібліогр.: 24 назв. — англ. |
series |
Functional Materials |
work_keys_str_mv |
AT mamaluiaa influenceofsevacanciesontheelectronenergyspectrumtransformationof2hnbse2 AT andreevaon influenceofsevacanciesontheelectronenergyspectrumtransformationof2hnbse2 AT sinelnikav influenceofsevacanciesontheelectronenergyspectrumtransformationof2hnbse2 |
first_indexed |
2023-10-18T20:39:07Z |
last_indexed |
2023-10-18T20:39:07Z |
_version_ |
1796150758294421504 |