Photoelectric properties of metal-porous silicon-silicon planar heterostructures
Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heter...
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| Дата: | 2002 |
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| Автори: | , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121336 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1213362017-06-15T03:03:11Z Photoelectric properties of metal-porous silicon-silicon planar heterostructures Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heterostructure at applied voltage biases V > 8-10 V and T = 77 K. The coefficient of multiplying at V = 11 V achieves 60 (dark) and 200 (light), which is close to that of silicon n+-p-i-p+ avalanche photodiodes. 2002 Article Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ. 1560-8034 PACS: 79.60.Jv http://dspace.nbuv.gov.ua/handle/123456789/121336 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Dark and light I-V characteristics as well as spectral curves of planar Ni-porous silicon-p-Si-Ni heterostructures have been studied. It is shown that photogeneration in heterostructure occurs both in the region of thin porous silicon layer and p-Si base. Avalanche breakdown is observed in the heterostructure at applied voltage biases V > 8-10 V and T = 77 K. The coefficient of multiplying at V = 11 V achieves 60 (dark) and 200 (light), which is close to that of silicon n+-p-i-p+ avalanche photodiodes. |
| format |
Article |
| author |
Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. |
| spellingShingle |
Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. Photoelectric properties of metal-porous silicon-silicon planar heterostructures Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Brodovoi, A.V. Brodovoi, V.A. Skryshevskyi, V.A. Bunchuk, S.G. Khnorozok, L.M. |
| author_sort |
Brodovoi, A.V. |
| title |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_short |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_full |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_fullStr |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_full_unstemmed |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| title_sort |
photoelectric properties of metal-porous silicon-silicon planar heterostructures |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121336 |
| citation_txt |
Photoelectric properties of metal-porous silicon-silicon planar heterostructures / A.V. Brodovoi, V.A. Brodovoi, V.A. Skryshevskyi, S.G. Bunchuk, L.M. Khnorozok // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 395-397. — Бібліогр.: 14 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:39:12Z |
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2023-10-18T20:39:12Z |
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1796150761693904896 |