Alloy scattering in quantum well wire structures of semiconductor ternaries
We studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloy-disorder-limited momentum relaxation time for carrier scattering in a cylindrical quantum wire using modeling wave functions,...
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Дата: | 2002 |
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Автор: | |
Формат: | Стаття |
Мова: | English |
Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121340 |
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Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
Цитувати: | Alloy scattering in quantum well wire structures of semiconductor ternaries / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 347-352. — Бібліогр.: 28 назв. — англ. |
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irk-123456789-1213402017-06-15T03:03:18Z Alloy scattering in quantum well wire structures of semiconductor ternaries Ibragimov, G.B. We studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloy-disorder-limited momentum relaxation time for carrier scattering in a cylindrical quantum wire using modeling wave functions, when the transverse part of the carrier wave function is taken as a Bessel function. It is found that the one-dimensional mobility is significantly greater than two-dimensional one. It is shown that the alloy-disorder-scattering-limited mobility increases with the increasing wire radius and increases with the increasing temperature. We compare our results with different scattering mechanisms for one-dimensional systems. Results are also included for the alloy composition dependence of the mobility. 2002 Article Alloy scattering in quantum well wire structures of semiconductor ternaries / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 347-352. — Бібліогр.: 28 назв. — англ. 1560-8034 PACS: 72.10.-d, 73.63.Hs http://dspace.nbuv.gov.ua/handle/123456789/121340 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
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Digital Library of Periodicals of National Academy of Sciences of Ukraine |
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DSpace DC |
language |
English |
description |
We studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloy-disorder-limited momentum relaxation time for carrier scattering in a cylindrical quantum wire using modeling wave functions, when the transverse part of the carrier wave function is taken as a Bessel function. It is found that the one-dimensional mobility is significantly greater than two-dimensional one. It is shown that the alloy-disorder-scattering-limited mobility increases with the increasing wire radius and increases with the increasing temperature. We compare our results with different scattering mechanisms for one-dimensional systems. Results are also included for the alloy composition dependence of the mobility. |
format |
Article |
author |
Ibragimov, G.B. |
spellingShingle |
Ibragimov, G.B. Alloy scattering in quantum well wire structures of semiconductor ternaries Semiconductor Physics Quantum Electronics & Optoelectronics |
author_facet |
Ibragimov, G.B. |
author_sort |
Ibragimov, G.B. |
title |
Alloy scattering in quantum well wire structures of semiconductor ternaries |
title_short |
Alloy scattering in quantum well wire structures of semiconductor ternaries |
title_full |
Alloy scattering in quantum well wire structures of semiconductor ternaries |
title_fullStr |
Alloy scattering in quantum well wire structures of semiconductor ternaries |
title_full_unstemmed |
Alloy scattering in quantum well wire structures of semiconductor ternaries |
title_sort |
alloy scattering in quantum well wire structures of semiconductor ternaries |
publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
publishDate |
2002 |
url |
http://dspace.nbuv.gov.ua/handle/123456789/121340 |
citation_txt |
Alloy scattering in quantum well wire structures of semiconductor ternaries / G.B. Ibragimov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 347-352. — Бібліогр.: 28 назв. — англ. |
series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
work_keys_str_mv |
AT ibragimovgb alloyscatteringinquantumwellwirestructuresofsemiconductorternaries |
first_indexed |
2023-10-18T20:39:13Z |
last_indexed |
2023-10-18T20:39:13Z |
_version_ |
1796150762121723904 |