Temperature dependences of SnTe linear expansion coefficient
The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained by using stationary and dynamic regimes. In the case of the stationary regi...
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| Дата: | 2002 |
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| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121343 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Temperature dependences of SnTe linear expansion coefficient / E.I. Rogacheva, V.P. Popov, O.N. Nashchekina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 373-377. — Бібліогр.: 13 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1213432017-06-15T03:04:34Z Temperature dependences of SnTe linear expansion coefficient Rogacheva, E.I. Popov, V.P. Nashchekina, O.N. The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained by using stationary and dynamic regimes. In the case of the stationary regime, an increase in with increasing temperature (4.2-300 K) was registered, and anomalies in the a(T) dependences were observed and attributed to phase transitions. After quick plunging into liquid nitrogen and subsequent heating the samples up to 300 K without keeping them for a long time at fixed temperatures (a dynamic regime), the a(T) dependences exhibited an oscillatory behavior, most pronounced in the sample with 50.4 at.% Te. It is suggested that the observed behavior of the a(T) dependences is connected with an oscillatory process of approaching the equilibrium in the intrinsic defect subsystem and with overlapping of relaxation processes and temperature phase transitions. 2002 Article Temperature dependences of SnTe linear expansion coefficient / E.I. Rogacheva, V.P. Popov, O.N. Nashchekina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 373-377. — Бібліогр.: 13 назв. — англ. 1560-8034 PACS: 65.40.De http://dspace.nbuv.gov.ua/handle/123456789/121343 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained by using stationary and dynamic regimes. In the case of the stationary regime, an increase in with increasing temperature (4.2-300 K) was registered, and anomalies in the a(T) dependences were observed and attributed to phase transitions. After quick plunging into liquid nitrogen and subsequent heating the samples up to 300 K without keeping them for a long time at fixed temperatures (a dynamic regime), the a(T) dependences exhibited an oscillatory behavior, most pronounced in the sample with 50.4 at.% Te. It is suggested that the observed behavior of the a(T) dependences is connected with an oscillatory process of approaching the equilibrium in the intrinsic defect subsystem and with overlapping of relaxation processes and temperature phase transitions. |
| format |
Article |
| author |
Rogacheva, E.I. Popov, V.P. Nashchekina, O.N. |
| spellingShingle |
Rogacheva, E.I. Popov, V.P. Nashchekina, O.N. Temperature dependences of SnTe linear expansion coefficient Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Rogacheva, E.I. Popov, V.P. Nashchekina, O.N. |
| author_sort |
Rogacheva, E.I. |
| title |
Temperature dependences of SnTe linear expansion coefficient |
| title_short |
Temperature dependences of SnTe linear expansion coefficient |
| title_full |
Temperature dependences of SnTe linear expansion coefficient |
| title_fullStr |
Temperature dependences of SnTe linear expansion coefficient |
| title_full_unstemmed |
Temperature dependences of SnTe linear expansion coefficient |
| title_sort |
temperature dependences of snte linear expansion coefficient |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121343 |
| citation_txt |
Temperature dependences of SnTe linear expansion coefficient / E.I. Rogacheva, V.P. Popov, O.N. Nashchekina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 373-377. — Бібліогр.: 13 назв. — англ. |
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Semiconductor Physics Quantum Electronics & Optoelectronics |
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2023-10-18T20:39:13Z |
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