Growth conditions influence on thermally stimulated luminescence of sapphire single crystals

• Дата: 2002
• Автори: Blonskyy, I.V., Vakhnin, A.Yu., Danko, A.Ya., Kadashchuk, A.K., Kadan, V.N., Sidelnikova, N.S., Puzikov, V.M., Skryshevskii, Yu.A.
• Формат: Стаття
• Мова: English
• Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2002
• Назва видання: Semiconductor Physics Quantum Electronics & Optoelectronics
• Онлайн доступ: http://dspace.nbuv.gov.ua/handle/123456789/121349
• Назва журналу: Digital Library of Periodicals of National Academy of Sciences of Ukraine
• Цитувати: Growth conditions influence on thermally stimulated luminescence of sapphire single crystals / I.V. Blonskyy, A.Yu. Vakhnin, A.Ya. Danko, A.K. Kadashchuk, V.N. Kadan, N.S. Sidelnikova, V.M. Puzikov, Yu.A. Skryshevskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 420-424. — Бібліогр.: 11 назв. — англ.

The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying composition and pressure are presented. This technique has an advantage of minimization of W and Mo erosion, thus providing a considerably reduced prime cost. At the same time, there are some problems connected with emergence of considerable number of anion vacancies, whose in-axis concentration gradient is directed oppositely to that of dopants (mainly Ti). The correlations are found between the conditions of -sapphire growing and the data of absorption and luminescent spectroscopy. An interaction between the anion vacancies and Ti dopants, which induces a transition from electric-charge state Ti⁴+ to Ti³+, is discussed.