Growth conditions influence on thermally stimulated luminescence of sapphire single crystals
The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying composition and pressure are presented. This technique has an advantage of minimi...
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| Дата: | 2002 |
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| Автори: | , , , , , , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2002
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121349 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Growth conditions influence on thermally stimulated luminescence of sapphire single crystals / I.V. Blonskyy, A.Yu. Vakhnin, A.Ya. Danko, A.K. Kadashchuk, V.N. Kadan, N.S. Sidelnikova, V.M. Puzikov, Yu.A. Skryshevskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 420-424. — Бібліогр.: 11 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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| spelling |
irk-123456789-1213492017-06-15T03:04:40Z Growth conditions influence on thermally stimulated luminescence of sapphire single crystals Blonskyy, I.V. Vakhnin, A.Yu. Danko, A.Ya. Kadashchuk, A.K. Kadan, V.N. Sidelnikova, N.S. Puzikov, V.M. Skryshevskii, Yu.A. The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying composition and pressure are presented. This technique has an advantage of minimization of W and Mo erosion, thus providing a considerably reduced prime cost. At the same time, there are some problems connected with emergence of considerable number of anion vacancies, whose in-axis concentration gradient is directed oppositely to that of dopants (mainly Ti). The correlations are found between the conditions of -sapphire growing and the data of absorption and luminescent spectroscopy. An interaction between the anion vacancies and Ti dopants, which induces a transition from electric-charge state Ti⁴+ to Ti³+, is discussed. 2002 Article Growth conditions influence on thermally stimulated luminescence of sapphire single crystals / I.V. Blonskyy, A.Yu. Vakhnin, A.Ya. Danko, A.K. Kadashchuk, V.N. Kadan, N.S. Sidelnikova, V.M. Puzikov, Yu.A. Skryshevskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 420-424. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS: 78.60.Kn, 78.55.Hx, 42.70.Hj, 71.55.Ht http://dspace.nbuv.gov.ua/handle/123456789/121349 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The results of investigation of thermally stimulated and photoluminescence as well as absorption spectra of a-sapphire grown by a technique of horizontally directed crystallization in a protective gas medium of varying composition and pressure are presented. This technique has an advantage of minimization of W and Mo erosion, thus providing a considerably reduced prime cost. At the same time, there are some problems connected with emergence of considerable number of anion vacancies, whose in-axis concentration gradient is directed oppositely to that of dopants (mainly Ti). The correlations are found between the conditions of -sapphire growing and the data of absorption and luminescent spectroscopy. An interaction between the anion vacancies and Ti dopants, which induces a transition from electric-charge state Ti⁴+ to Ti³+, is discussed. |
| format |
Article |
| author |
Blonskyy, I.V. Vakhnin, A.Yu. Danko, A.Ya. Kadashchuk, A.K. Kadan, V.N. Sidelnikova, N.S. Puzikov, V.M. Skryshevskii, Yu.A. |
| spellingShingle |
Blonskyy, I.V. Vakhnin, A.Yu. Danko, A.Ya. Kadashchuk, A.K. Kadan, V.N. Sidelnikova, N.S. Puzikov, V.M. Skryshevskii, Yu.A. Growth conditions influence on thermally stimulated luminescence of sapphire single crystals Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Blonskyy, I.V. Vakhnin, A.Yu. Danko, A.Ya. Kadashchuk, A.K. Kadan, V.N. Sidelnikova, N.S. Puzikov, V.M. Skryshevskii, Yu.A. |
| author_sort |
Blonskyy, I.V. |
| title |
Growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| title_short |
Growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| title_full |
Growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| title_fullStr |
Growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| title_full_unstemmed |
Growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| title_sort |
growth conditions influence on thermally stimulated luminescence of sapphire single crystals |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2002 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121349 |
| citation_txt |
Growth conditions influence on thermally stimulated luminescence of sapphire single crystals / I.V. Blonskyy, A.Yu. Vakhnin, A.Ya. Danko, A.K. Kadashchuk, V.N. Kadan, N.S. Sidelnikova, V.M. Puzikov, Yu.A. Skryshevskii // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 4. — С. 420-424. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT blonskyyiv growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT vakhninayu growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT dankoaya growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT kadashchukak growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT kadanvn growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT sidelnikovans growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT puzikovvm growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals AT skryshevskiiyua growthconditionsinfluenceonthermallystimulatedluminescenceofsapphiresinglecrystals |
| first_indexed |
2023-10-18T20:39:14Z |
| last_indexed |
2023-10-18T20:39:14Z |
| _version_ |
1796150763071733760 |