The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure

The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure

Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a good agreement with experimental and theoretical valu...

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Видавець:Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
Дата:2006
Автори: Berrah, S., Abid, H., Boukortt, A.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121424
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Цитувати:The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure / S. Berrah, H. Abid, A. Boukortt // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 12-16. — Бібліогр.: 43 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
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spelling irk-123456789-1214242017-06-15T03:05:28Z The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure Berrah, S. Abid, H. Boukortt, A. Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a good agreement with experimental and theoretical values. 2006 Article The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure / S. Berrah, H. Abid, A. Boukortt // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 12-16. — Бібліогр.: 43 назв. — англ. 1560-8034 PACS 71.20.Mq, 78.40.Fy http://dspace.nbuv.gov.ua/handle/123456789/121424 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
institution Digital Library of Periodicals of National Academy of Sciences of Ukraine
collection DSpace DC
language English
description Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The results obtained are in a good agreement with experimental and theoretical values.
format Article
author Berrah, S.
Abid, H.
Boukortt, A.
spellingShingle Berrah, S.
Abid, H.
Boukortt, A.
The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
Semiconductor Physics Quantum Electronics & Optoelectronics
author_facet Berrah, S.
Abid, H.
Boukortt, A.
author_sort Berrah, S.
title The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
title_short The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
title_full The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
title_fullStr The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
title_full_unstemmed The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure
title_sort first principle calculation of electronic and optical properties of aln, gan and inn compounds under hydrostatic pressure
publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
publishDate 2006
url http://dspace.nbuv.gov.ua/handle/123456789/121424
citation_txt The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure / S. Berrah, H. Abid, A. Boukortt // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 12-16. — Бібліогр.: 43 назв. — англ.
series Semiconductor Physics Quantum Electronics & Optoelectronics
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first_indexed 2023-10-18T20:39:25Z
last_indexed 2023-10-18T20:39:25Z
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