Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy
The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains appearance is similar to the first order phase transition and completely agree with...
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| Дата: | 2006 |
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| Автор: | |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121428 |
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| Назва журналу: | Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| Цитувати: | Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy / A.N. Morozovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 26-33. — Бібліогр.: 43 назв. — англ. |
Репозитарії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
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irk-123456789-1214282017-06-15T03:03:41Z Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy Morozovska, A.N. The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains appearance is similar to the first order phase transition and completely agree with experimentally observed threshold nanodomains recording in Pb(Zr,Ti)O₃ and LiTaO₃ thin films. The realistic dependence of equilibrium nanodomain radius over applied voltage in BaTiO₃ LiNbO₃ ferroelectric-semiconductors, LiTaO₃ and Pb(Zr,Ti)O₃ thin films have been calculated. These results will help researchers both to achieve the reliable understanding of physical process taking place during nanoscale polarization reversal in the ferroelectric-semiconducting media and to determine the necessary conditions in order to record stable nanodomains with optimum lateral sizes and configuration to increase recording density and create various profiled microstructures. 2006 Article Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy / A.N. Morozovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 26-33. — Бібліогр.: 43 назв. — англ. 1560-8034 PACS 77.80.-e, 77.80.Dj, 61.43.-j http://dspace.nbuv.gov.ua/handle/123456789/121428 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains appearance is similar to the first order phase transition and completely agree with experimentally observed threshold nanodomains recording in Pb(Zr,Ti)O₃ and LiTaO₃ thin films. The realistic dependence of equilibrium nanodomain radius over applied voltage in BaTiO₃ LiNbO₃ ferroelectric-semiconductors, LiTaO₃ and Pb(Zr,Ti)O₃ thin films have been calculated. These results will help researchers both to achieve the reliable understanding of physical process taking place during nanoscale polarization reversal in the ferroelectric-semiconducting media and to determine the necessary conditions in order to record stable nanodomains with optimum lateral sizes and configuration to increase recording density and create various profiled microstructures. |
| format |
Article |
| author |
Morozovska, A.N. |
| spellingShingle |
Morozovska, A.N. Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Morozovska, A.N. |
| author_sort |
Morozovska, A.N. |
| title |
Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| title_short |
Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| title_full |
Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| title_fullStr |
Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| title_full_unstemmed |
Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| title_sort |
modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121428 |
| citation_txt |
Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy / A.N. Morozovska // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 26-33. — Бібліогр.: 43 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
| work_keys_str_mv |
AT morozovskaan modellingofmicroandnanodomainarraysrecordedinferroelectricssemiconductorsbyusingatomicforcemicroscopy |
| first_indexed |
2023-10-18T20:39:25Z |
| last_indexed |
2023-10-18T20:39:25Z |
| _version_ |
1796150774511697920 |