Ge/Si heterojunction photodetector for 1.064 μm laser pulses
Iso- and anisotype heterojunction Ge/Si photodetectors were made by depositing Ge layer onto monocrystalline Si using a vacuum evaporation technique. These detectors before and after annealing were utilized to detect 1.064 µm Nd:YAG laser pulses. The study also included determination of the optimal...
Збережено в:
| Видавець: | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
|---|---|
| Дата: | 2006 |
| Автори: | , , |
| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України
2006
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| Назва видання: | Semiconductor Physics Quantum Electronics & Optoelectronics |
| Онлайн доступ: | http://dspace.nbuv.gov.ua/handle/123456789/121433 |
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| Цитувати: | Ge/Si heterojunction photodetector for 1.064 μm laser pulses / Raid A. Ismail, Jospen Koshapa, Omar A. Abdulrazaq // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 49-52. — Бібліогр.: 11 назв. — англ. |
Репозиторії
Digital Library of Periodicals of National Academy of Sciences of Ukraine| id |
irk-123456789-121433 |
|---|---|
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dspace |
| spelling |
irk-123456789-1214332017-06-15T03:04:41Z Ge/Si heterojunction photodetector for 1.064 μm laser pulses Ismail, Raid A. Koshapa, Jospen Abdulrazaq, Omar A. Iso- and anisotype heterojunction Ge/Si photodetectors were made by depositing Ge layer onto monocrystalline Si using a vacuum evaporation technique. These detectors before and after annealing were utilized to detect 1.064 µm Nd:YAG laser pulses. The study also included determination of the optimal Ge thickness and annealing conditions. The experimental results show that the photoresponse was highly improved after classical thermal annealing and rapid thermal annealing (RTA). The voltage responsivity and signal rise time results strongly depended on the annealing type and conditions. It was found that the optimal conditions can be obtained for n-Ge/p-Si photodetector prepared with Ge 200 nm thick and treated with RTA at 500 ºC for 25 s. 2006 Article Ge/Si heterojunction photodetector for 1.064 μm laser pulses / Raid A. Ismail, Jospen Koshapa, Omar A. Abdulrazaq // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 49-52. — Бібліогр.: 11 назв. — англ. 1560-8034 PACS 42.79.Pw, 85.60.Gz http://dspace.nbuv.gov.ua/handle/123456789/121433 en Semiconductor Physics Quantum Electronics & Optoelectronics Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| institution |
Digital Library of Periodicals of National Academy of Sciences of Ukraine |
| collection |
DSpace DC |
| language |
English |
| description |
Iso- and anisotype heterojunction Ge/Si photodetectors were made by depositing Ge layer onto monocrystalline Si using a vacuum evaporation technique. These detectors before and after annealing were utilized to detect 1.064 µm Nd:YAG laser pulses. The study also included determination of the optimal Ge thickness and annealing conditions. The experimental results show that the photoresponse was highly improved after classical thermal annealing and rapid thermal annealing (RTA). The voltage responsivity and signal rise time results strongly depended on the annealing type and conditions. It was found that the optimal conditions can be obtained for n-Ge/p-Si photodetector prepared with Ge 200 nm thick and treated with RTA at 500 ºC for 25 s. |
| format |
Article |
| author |
Ismail, Raid A. Koshapa, Jospen Abdulrazaq, Omar A. |
| spellingShingle |
Ismail, Raid A. Koshapa, Jospen Abdulrazaq, Omar A. Ge/Si heterojunction photodetector for 1.064 μm laser pulses Semiconductor Physics Quantum Electronics & Optoelectronics |
| author_facet |
Ismail, Raid A. Koshapa, Jospen Abdulrazaq, Omar A. |
| author_sort |
Ismail, Raid A. |
| title |
Ge/Si heterojunction photodetector for 1.064 μm laser pulses |
| title_short |
Ge/Si heterojunction photodetector for 1.064 μm laser pulses |
| title_full |
Ge/Si heterojunction photodetector for 1.064 μm laser pulses |
| title_fullStr |
Ge/Si heterojunction photodetector for 1.064 μm laser pulses |
| title_full_unstemmed |
Ge/Si heterojunction photodetector for 1.064 μm laser pulses |
| title_sort |
ge/si heterojunction photodetector for 1.064 μm laser pulses |
| publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
| publishDate |
2006 |
| url |
http://dspace.nbuv.gov.ua/handle/123456789/121433 |
| citation_txt |
Ge/Si heterojunction photodetector for 1.064 μm laser pulses / Raid A. Ismail, Jospen Koshapa, Omar A. Abdulrazaq // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 49-52. — Бібліогр.: 11 назв. — англ. |
| series |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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| first_indexed |
2023-10-18T20:39:26Z |
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