Micropatterning in bistable cholesteric device with Bragg's reflection

In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential relief on SiO₂ surface is induced due to enrichment and depletion of required for...

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Збережено в:
Бібліографічні деталі
Дата:2006
Автори: Gritsenko, M.I., Kucheev, S.I., Lytvyn, P.M., Tishenko, V.G., Tkach, V.M., Yelshansky, V.B.
Формат: Стаття
Мова:English
Опубліковано: Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України 2006
Назва видання:Semiconductor Physics Quantum Electronics & Optoelectronics
Онлайн доступ:http://dspace.nbuv.gov.ua/handle/123456789/121435
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Назва журналу:Digital Library of Periodicals of National Academy of Sciences of Ukraine
Цитувати:Micropatterning in bistable cholesteric device with Bragg's reflection / M.I. Gritsenko, S.I. Kucheev, P.M. Lytvyn, V.G. Tishenko, V.M. Tkach, V.B. Yelshansky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2006. — Т. 9, № 2. — С. 61-64. — Бібліогр.: 14 назв. — англ.

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Digital Library of Periodicals of National Academy of Sciences of Ukraine
Опис
Резюме:In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential relief on SiO₂ surface is induced due to enrichment and depletion of required form areas of the silicon near-surface layer during external electric field action. The patterning of enrichment is determined by the positive charge embedded into SiO₂ film, which is formed by thermodiffusion of aluminum atoms.